TG2000F ,TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)FEATURESo On account of this Device build in Bias Circuit, Cut downnumhnr rtf surtirlescInulllwul V ..
TG2006F ,GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless TelecommunicationElectrical Characteristics (V = 3 V, V = (Note2), f = 1.9 GHz, Ta = 25°C, Z = Z = 50 Ω, 1/2 duty op ..
TG2200AF ,RF Cell PacksFEATURES0 LOW INSERTION LOSS : Loss=0.5dB (Typ.)0 HIGH ISOLATION : |SL=25dB (Typ.). CUNIRUL VULIAGI ..
TG2204F ,1.9GHz BAND ANTENNA SWITCH (PHS DIGITAL CORDLESS TELEPHONE)FEATURESo LOWINSERTION LOSS : Loss=0.5dB(Typ.)O HIGHTISOLATION : |SL=25dB(Typ.)O (ONTROI \IOITAGF . ..
TG2205F ,RF SPDT Switch (Application: PHS)Electrical Characteristics (V = 3 V, f = 1.907 GHz, Ta = 25°C, Z = Z = 50 Ω)DD g ITest Characteris ..
TG2210FT ,GaAs Linear Integrated Circuit GaAs Monolithic RF SPDT SwitchElectrical Characteristics (f 1 GHz, Ta 25°C, Zg Zl 50 )Test Characteri ..
TLC1549ID ,10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch.featuresdifferential high-impedance reference inputs thatNC – No internal connectionfacilitate rati ..
TLC1549IDRG4 ,10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-SOIC TLC1549C, TLC1549I, TLC1549M 10-BIT ANALOG-TO-DIGITAL CONVERTERSWITH SERIAL CONTROLSLAS059C – DECE ..
TLC1549IP ,10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch.featuresdifferential high-impedance reference inputs thatNC – No internal connectionfacilitate rati ..
TLC1549IP ,10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch.featuresdifferential high-impedance reference inputs thatNC – No internal connectionfacilitate rati ..
TLC1550IDW ,10-Bit, 164 kSPS ADC Parallel Out, Direct I/F to DSP/uProcessor, 10 Ch.block diagramEOC10CSSuccessive-Control D0−D9WR ApproximationLogicRegisterRD10Frequency InternalDGTL ..
TLC1550IDW ,10-Bit, 164 kSPS ADC Parallel Out, Direct I/F to DSP/uProcessor, 10 Ch. SLAS043G − MAY 1991 ..
TG2000F
TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
TOSHIBA TG2000F
TOSHIBA MOS TYPE INTEGRATED CIRCUIT GaAs MONOLITHIC
TG2000F
TV TUNER, UHF RF AMPLIFIER APPLICATIONS.
FEATURES
0 On account of this Device build in Bias Circuit, Cut down
number of articles.
0 Low Noise Figure. : NF=1.5dB (Typ.)
0 Operating Voltage. : 1/DD=4--5V
PIN ASSIGNMENT (TOP VIEW) MARKING
GATE 2 GATE 1 TYPE NAME kl’
Fl Fl Fl Fl cc.
IE] El hi] hd Iz] la] SSOP5-P-0S5
DRAIN GND SOURCE Weight : 0.0149 (Typ.)
MAXIMUM RATING (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VDD 6 V
Gate 2-Drain Voltage VGZDO -6 V
Gate 2-Source Voltage V525 -4 V
Gate 2 Current IG2 1 mA
Drain Power Dissipation PD 150 mW
Operating Temperature Range Top, -40-85 "C
Storage Temperature Range Tstg -55--125 °C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Gate 2 Leakage Current IGZSS - 1/Ds=0, VGIS=0, VG2S= -31/ - - -4 PA
Drain Current IDSS - VDS=2V, VG1s=0, VG2S=0 4 - 16 mA
Gate 2-Source Cut-off VDS=2V, VG1S=0 - -
Voltage V625 (OFF) - b = 100PA 0.75 - 1.3 V
Forward Transfer VDS = 2V, V625 = 0.5V
Admittance IYfSI - ID =2mA, f=1kH2 - 12 - mS
. VDD=4.5V, VG2 =2.5V - -
Drain Current IDD 1 R=3900 11 mA
PowerGain Gps 2 VDD=4.5V, VG2=2-5V 15 19 - dB
Noise Figure NF f=800MHZ, R=3900 - 1.5 2.5 dB
961001 EBA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-07-22 1/5
TOSHIBA TG2000F
CAUTION
GaAs (Gallium Arsenide) is used in this product. The dust or vapor cam be dangerous to humans.
Do not break, cut, crush or dissolve chemically. Dispose of this product properly according to law.
Do not intermingle with normal industrial or domestic waste.
This device is electrostatic sensitivity. Please handle with caution.
EQUIVALENT CIRCUIT TEST CIRCUIT 1
G2 CY-
G1 C r.
4 1: 1r VDD $0sz
It , tE 1 5
---t7s l
n: . R2 turn 3 4
TEST CIRCUIT 2
800MHz Gps, NF INPUT OUTPUT
Rg -cson SHIELD RL =500
1~20pF L2 - l--20pF
._. CASE
Cl r-t
c 100 F c l u
1 3 p 3 C2
C2 : 1000pF c,
c3 : 10000pF
Lr-lay : ff(Mmm SILVER PLATED COPPER WIRE
c : AIR TRIMMER TTA25A200A (MURATA MFG. Co., LTD.)
RFC : ¢0_35mm COPPER WIRE 3mm ID, 10T
961001EBA2'
O The products described in this document are subject to foreign exchange and foreign trade control laws.
o The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T 9 information contained herein is subject to change without notice.
1997-07-22 2/5
TOSHIBA TG2000F
Gps, NF - VDD IDD - VDD
12 16 I 1
f=800MHz v --rsvl
R=3900 Gil .
Gps R--390n 1giv"
VG2--3SV Ta=25°C 10 a" Ta=25°C ge" -
'is," iii" s 14 "
V 2.5V 8 v a /
ll I 'h 9 /
Q 2.0V w F- j/
a 6 u: a 12
a D g /
ll? L9 ce /
K LL D
' 4 a g /
2 a g 10 A
o 2 4 6 8 10 12 0 2 4 6 8 10
DRAIN VOLTAGE VDD (v) DRAIN VOLTAGE VDD (v)
Gps, NF - VDD IDD - VDD
VG2--25V v =2.5v
Gps R=OPEN f=800MHz 'f=siiti'J,
R=OPEN, 3900 10 - Q
Ta=25°C C? R=OPEN, 390
i,ij," 'iii," g Ta=25°C
‘; R=3900 8 m o
e'i' a 9
E 6 a: E
K u, D
Lu 4 a U
t i5 E
n. a g
0 2 4 6 8 10 12 0 2 4 6 8 10 12
DRAIN VOLTAGE VDD (V) DRAIN VOLTAGE VDD (V)
Gps, IDD - VG2 Po, IM3 - Pi
DD=4.5V 8 LP-- -2dBmW
=800MHz -
- 0 P dB-- -7dB w
=OPEN, 3900 a 5, 1 m
A a--25''C "
'.'l. 5 8.5 -10
0 Eti'. Po
3 ' ''5 -20 (f=800MHz)
Z E 5; -30
nt c: 0.0
E, u lik' -40 -
it 3 ED VDD--45V
C) < 95: -50 VG2=2.5V
D. y m
o F- f=800.2MHz
E 800.4MHz
é -60 R=390S2
-2.0 -1.0 0 1.0 2.0 3.0
GATE2 VOLTAGE v62 (v)
Ta=25°C
-60 -50 -40 -30 -20 -10 0
INPUT POWER Pi (dBmW)
1997-07-22 3/5
TOSHIBA
TGZOOOF
VDD=4.5V
VG2=2.5V
f=80mez
R=3900
Ta=25°C
ps j100
j10 j250
10 25 50 100 250
C II ,
f=0.1GHz
-J'10 2.0 1.51.0 -j250
-j25 -j100
VDD = 4.5V
VG2 = 2.5V
f= 800MHz
R= 3909
Ta = 25°C
j25 j100
j10 j250
0 10 25 50 100 250
f=0.1GHz
-J'10 2.0
-j25 j100
1997-07-22 4/5
TOSHIBA TG2000F
OUTLINE DRAWING
SSOP5-P-0.95 Unit : mm
_-. I 5 T"""
fi) - it!
- Erie"
T""" v r-..f " I, _.O IL
T"'' " n
Weight : 0.0149 (Typ.)
1997-07-22 5/5
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