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TDA1517ATW
8 W BTL or 2 脳 4 W SE power
NXP Semiconductors Product specification W BTL or 2×
4 W SE power amplifier TDA1517ATW
FEATURES Requires very few external components Flexibility in use: mono Bridge-Tied Load (BTL) and
stereo Single-Ended (SE); it should be noted that in
stereo applications the outputs of both amplifiers are in
opposite phase High output power Low offset voltage at output (important for BTL) Fixed gain Good ripple rejection Mode select switch (operating, mute and standby) AC and DC short-circuit safe to ground andVP Electrostatic discharge protection Thermal protection Reverse polarity safe Capable of handling high energy on outputs (VP =0V) No switch-on/switch-off plop Low thermal resistance.
GENERAL DESCRIPTIONThe TDA1517ATW is an integrated class-AB output
amplifier contained in a plastic heatsink thin shrink small
outline package (HTSSOP20). The device is primarily
developed for multimedia applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
NXP Semiconductors Product specification W BTL or 2×4 W SE power amplifier TDA1517ATW
BLOCK DIAGRAM
NXP Semiconductors Product specification W BTL or 2×4 W SE power amplifier TDA1517ATW
PINNING
FUNCTIONAL DESCRIPTIONThe TDA1517ATW contains two identical amplifiers with differential input stages. This device can be used for Bridge-Tied
Load (BTL) or Single-Ended (SE) applications. The gain of each amplifier is fixed at 20 dB. A special feature of this
device is the mode select switch. Since this pin has a very low input current (<40 μA), a low cost supply switch can be
used. With this switch the TDA1517ATW can be switched into three modes: Standby: low supply current Mute: input signal suppressed Operating: normal on condition.
NXP Semiconductors Product specification W BTL or 2×4 W SE power amplifier TDA1517ATW
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS CHARACTERISTICS =12V; Tamb =25 °C; measured in Fig.3; unless otherwise specified.
Note The circuit is DC adjusted at VP=6to18 V and AC operating at VP= 8.5to18V.
NXP Semiconductors Product specification W BTL or 2×4 W SE power amplifier TDA1517ATW
CHARACTERISTICS =12V; f=1kHz; Tamb =25 °C; unless otherwise specified.
NXP Semiconductors Product specification W BTL or 2×4 W SE power amplifier TDA1517ATW
Notes to the characteristics RL =4 Ω, measured in Fig.4. Output power is measured directly at the output pins of the IC. Frequency response externally fixed. Vripple =Vripple(max)=2V (p-p); RS =0Ω. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz. Noise output voltage independent of RS. Vi =Vi(max)=1 V (RMS). RL =8 Ω, measured in Fig.3.
APPLICATION INFORMATION
NXP Semiconductors Product specification W BTL or 2×4 W SE power amplifier TDA1517ATW
Test conditionsTamb =25 °C; unless otherwise specified: VP =12V, BTL
application, f=1 kHz, RL =8 Ω, fixed gain=26 dB, audio
band-pass: 22Hzto22 kHz. In the figures as a function of
frequency a band-pass of 10Hzto80 kHz was applied.
The BTL application block diagram is shown in Fig.3. The
PCB layout [which accommodates both the mono (BTL)
and stereo (single-ended) application] is shown in Fig.6.
Printed-Circuit Board (PCB) layout and groundingFor high system performance levels certain grounding
techniques are imperative. The input reference grounds
have to be tied to their respective source grounds and
must have separate traces from the power ground traces;
this will separate the large (output) signal currents from
interfering with the small AC input signals. The small signal
ground traces should be located physically as far as
possible from the power ground traces. Supply and output
traces should be as wide as possible for delivering
maximum output power.
Proper supply bypassing is critical for low noise
performance and high power supply rejection. The
respective capacitor locations should be as close as
possible to the device and grounded to the power ground.
Decoupling the power supply also prevents unwanted
oscillations. For suppressing higher frequency transients
(spikes) on the supply line a capacitor with low ESR
(typical 0.1 μF) has to be placed as close as possible to the
device. For suppressing lower frequency noise and ripple
signals, a large electrolytic capacitor (e.g. 1000 μF or
greater) must be placed close to theIC.
In single-ended (stereo) application a bypass capacitor
connected to pin SVR reduces the noise and ripple on the
midrail voltage. For good THD and noise performance a
low ESR capacitor is recommended.
Input configurationIt should be noted that the DC level of the input pins is
approximately 2.1 V; a coupling capacitor is therefore
necessary.
NXP Semiconductors Product specification W BTL or 2×4 W SE power amplifier TDA1517ATW
The formula for the cut-off frequency at the input is as
follows:
thus
As can be seen it is not necessary to use high capacitor
values for the input; so the delay during switch-on, which
is necessary for charging the input capacitors, can be
minimized. This results in a good low frequency response
and good switch-on behaviour.
In stereo applications (single-ended) coupling capacitors
on both input and output are necessary. It should be noted
that the outputs of both amplifiers are in opposite phase.
Built-in protection circuitsThe IC contains two types of protection circuits: Short-circuits the outputs to ground, the supply to
ground and across the load: short-circuit is detected and
controlled by a SOAR protection circuit Thermal shut-down protection: the junction temperature
is measured by a temperature sensor. Thermal foldback
is activated at a junction temperature of >150 °C.
Output powerThe output power as a function of supply voltage has been
measured on the output pins and at THD= 10%. The
maximum output power is limited by the maximum
allowable power dissipation and the maximum available
output current, 2.5 A repetitive peak current.
Supply voltage ripple rejectionThe SVRR has been measured without an electrolytic
capacitor on pin 5 and at a bandwidth of 10Hzto80 kHz.
The curves for operating and mute condition (respectively)
were measured with Rsource =0 Ω. Only in single-ended
applications is an electrolytic capacitor (e.g. 100 μF) on
pin 5 necessary to improve the SVRR behaviour.
HeadroomA typical music CD requires at least 12 dB (is factor 15.85)
dynamic headroom (compared with the average power
output) for passing the loudest portions without distortion.
The following calculation can be made for this application
at VP=12 V and RL =8 Ω: Po at THD= 0.1% is
approximately 5 W (see Fig.7).
Average listening level without any distortion yields:
The power dissipation can be derived from Fig.11 for 0 dB
and 12 dB headroom.
Table 1 Power rating
Thus for the average listening level (music power) a power
dissipation of 2.0 W can be used for the thermal PCB
calculation; see Section “Thermal behaviour (PCB design
considerations)”.
Mode pinFor the 3 functional modes: standby, mute and operate,
the MODE pin can be driven by a 3-state logic output
stage, e.g. a microcontroller with some extra components
for DC-level shifting; see Fig.10 for the respective levels. Standby mode is activated by a low DC level between and2 V. The power consumption of the IC will be
reduced to <0.12 mW. Mute mode is activated by a DC level between
3.3 and 6.4 V. The outputs of the amplifier will be muted
(no audio output); however the amplifier is DC biased
and the DC level of the output pins stays at half the
supply voltage. The input coupling capacitors are
charged when in mute mode to avoid pop-noise. The IC will be in the operating condition when the
voltage at pin MODE is between 8.5 V and VCC.
Switch-on/switch-offTo avoid audible plops during switch-on and switch-off of
the supply voltage, the MODE pin has to be set in standby
condition (VCC level) before the voltage is applied
(switch-on) or removed (switch-off). The input and SVRR
capacitors are smoothly charged during mute mode.
The turn-on and turn-off time can be influenced by an
RC-circuit connected to the MODE pin. Switching the
device or the MODE pin rapidly on and off may cause ‘click
and pop’ noise. This can be prevented by proper timing on
the MODE pin. Further improvement in the BTL application
can be obtained by connecting an electrolytic capacitor
(e.g. 100 μF) between the SVRR pin and signal ground.IC 1 π× RiCi×------- ----------- ------------=IC 1 π× 30× 103–× 470× 109–×
------- ---------------------- ---------------- ----------- ---------------------- 11 Hz==ALL Ptot
factor- ---------------- 5
15.85--------------- 315 mW== =
NXP Semiconductors Product specification W BTL or 2×4 W SE power amplifier TDA1517ATW
Thermal behaviour (PCB design considerations)The typical thermal resistance [Rth(j-a)] of the IC in the
HTSSOP20 package is 37 K/W if the IC is soldered on a
printed-circuit board with double sided 35 μm copper with
a minimum area of approximately 30 cm2 . The actual
usable thermal resistance depends strongly on the
mounting method of the device on the printed-circuit
board, the soldering method and the area and thickness of
the copper on the printed-circuit board.
The bottom ‘heat-spreader’ of the IC has to be soldered
efficiently on the ‘thermal land’ of the copper area of the
printed-circuit board using the re-flow solder technique.
A number of thermal vias in the ‘thermal land’ provide a
thermal path to the opposite copper site of the
printed-circuit board. The size of the surface layers should
be as large as needed to dissipate the heat.
The thermal vias (0.3 mm ∅) in the ‘thermal land’ should
not use web construction techniques, because those will
have high thermal resistance; continuous connection
completely around the via-hole is recommended.
For a maximum ambient temperature of 60 °C the
following calculation can be made: for the application at =12 V and RL =8 Ω the (ALL-) music power
dissipation approximately 2.0 W;
Tj(max) =Tamb +P× Rth(j-a) =60 °C+2.0×37= 134 °C.
Note: the above calculation holds for application at
‘average listening level’ music output signals. Applying (or
testing) with sine wave signals will produce approximately
twice the music power dissipation; at worst case condition
this can activate the maximum temperature protection.
