TC58V64BFT ,64-MBIT (8M x 8 BITS) CMOS NAND E2PROMTC58V64BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 264-MBIT (8M 8 BIT ..
TC59LM818DMB-40 , MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
TC59LM818DMG-33 , MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
TC59S6404BFT-80 ,MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHICTOSHIBA TC5956416/08/04BFT/BFTL-80,-1O1,048,576-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM2,097,1 ..
TC59S6408BFT-10 ,MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHICTOSHIBA TC5956416/08/04BFT/BFTL-80,-1O1,048,576-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM2,097,1 ..
TC59S6408BFT-80 ,1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAMTOSHIBA TC5956416/08/04BFT/BFTL-80,-1O1,048,576-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM2,097,1 ..
TCA3385DP ,Telephone ring signal converter(ll) MOTOROLA TCA3385Advance InformationTelephone ring signal converterThe TCA3385 is a high effici ..
TCA3385DP ,Telephone ring signal converter(ll) MOTOROLA TCA3385Advance InformationTelephone ring signal converterThe TCA3385 is a high effici ..
TCA3385-DP ,Telephone ring signal converter(ll) MOTOROLA TCA3385Advance InformationTelephone ring signal converterThe TCA3385 is a high effici ..
TCA3385FP ,Telephone ring signal converter(ll) MOTOROLA TCA3385Advance InformationTelephone ring signal converterThe TCA3385 is a high effici ..
TCA3385FP ,Telephone ring signal converter(ll) MOTOROLA TCA3385Advance InformationTelephone ring signal converterThe TCA3385 is a high effici ..
TCA345A , THRESHOLD SWITCH
TC58V64BFT
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM
TC58V64BFT Program/Erase Cycles 1E5 cycle (with ECC) Access time
Cell array to register 25 �s max
Serial Read Cycle 50 ns min Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ.
Standby 100 �A Package TSOPII44/40-P-400-0.80B (Weight: 0.48 g typ.)
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64-MBIT (8M � 8 BITS) CMOS NAND E2 PROM
DESCRIPTION The TC58V64B is a single 3.3 V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2 PROM) organized as 528 bytes � 16 pages � 1024 blocks. The device has a 528-byte
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte increments. The Erase operation is implemented in a single block unit (8 Kbytes � 256 bytes: 528 bytes � 16 pages).
The TC58V64B is a serial-type memory device which utilizes the I/O pins for both address and data input/output
as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras
and other systems which require high-density non-volatile memory data storage.
FEATURES Organization
Memory cell allay 528 � 16K � 8
Register 528 � 8
Page size 528 bytes
Block size (8K � 256) bytes Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read Mode control
Serial input/output
Command control
PIN ASSIGNMENT (TOP VIEW) PIN NAMES 000707EBA1
