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TC58NVG1S3BFT00 from TOSHIBA, TOSHIBA 31pcs , TSOP,(TC58NVG1S8BFT00) 2 GBit CMOS NAND EPROM
Partno Mfg Dc Qty Available
TC58NVG1S3BFT00 TOSHIBA N/a 31
FEATURES • Organization TC58NVG1S3B TC58NVG1S8B Memory cell array 2112 × 128K × 8 1056 × 128K × 16 Register 2112 × 8 1056 × 16 Page size 2112 bytes 1056 words Block size (128K + 4K) bytes (64K + 2K) words • Modes Read, Reset, Auto Page Program, Auto Block Erase Status Read • Mode control Serial input/output Command control • Number of valid blocks Max 2048 blocks Min 2008 blocks • Power supply = 2.7 V to 3.6 V VCC • Program/Erase Cycles 100000 Cycles (With ECC) • Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min • Program/Erase time Auto Page Program 200 µs/page typ. Auto Block Erase 1.5 ms/block typ. • Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 µA max • Package TC58NVG1S3BFT00 TSOP I 48-P-1220-0.50 TC58NVG1S8BFT00 TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.) 2003-10-30A 1 TC58NVG1S3BFT00/TC58NVG1S8BFT00 PIN ASSIGNMENT (TOP VIEW) TC58NVG1S8BFT00 TC58NVG1S3BFT00 ×16 ×8 ×8 ×16NC NC 1 48 NC V SSNC NC 2 47 NC I/O16NC NC 3 46 NC I/O8NC NC 4 45 NC I/O15NC NC 5 44 I/O8 I/O7GND GND 6 43 I/O7 I/O14RY /BY RY /BY7 42 I/O6 I/O6RE RE8 41 I/O5 I/O13CE CE9 40 NC I/O5NC NC 10 39 PSL PSLNC NC 11 38 NC NC V V 12 37 V V CC CC CC CCV V 13 36 V NC SS SS SSNC NC 14 35 NC NC NC NC 15 34 NC NC CLE CLE 16 33 NC I/O12ALE ALE 17 32 I/O4 I/O4WE WE18 31 I/O3 I/O11WP WP19 30 I/O2 I/O3NC NC 20 29 I/O1 I/O10NC NC 21 28 NC I/O2NC NC 22 27 NC I/O9 NC NC 23 26 NC I/O1 NC NC 24 25 NC V SS PINNAMES I/O1 to I/O8 I/O port I/O9 to I/O16 I/O port (×16) CE Chip enable WE Write enable RE Read enable CLE Command latch enable ALE Address latch enable PSL Power on select WP Write protect RY/BY Ready/Busy GND Ground V Power supply CCV Ground SS 2003-10-30A 2 TC58NVG1S3BFT00/TC58NVG1S8BFT00
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