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TC58NVG0S3AFT05 from TOSHIBA, TOSHIBA 364pcs , TSOP48,1 GBit CMOS NAND EPROM
Partno Mfg Dc Qty Available
TC58NVG0S3AFT05 TOSHIBA N/a 364
FEATURES • Organization • Powersupply V = 2.7 V to 3.6 V CCMemory cell array 2112 × 64K × 8 • Program/Erase Cycles 1E5 Cycles (With ECC) Register 2112 × 8 • Access time Page size 2112 bytes Cell array to register 25 µs max Block size (128K + 4K) bytes Serial Read Cycle 50 ns min • Modes • Operating current Read, Reset, Auto Page Program Read (50 ns cycle) 10 mA typ. Auto Block Erase, Status Read Program (avg.) 10 mA typ. • Mode control Erase (avg.) 10 mA typ. Serial input/output Standby 50 µA max Command control • Package TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.) PIN ASSIGNMENT PIN NAMES (TOP VIEW)NC 1 48 NC I/O1 to I/O8 I/O port NC 2 47 NC NC 3 46 NC CE Chip enable NC 4 45 NC NC 5 44 I/O8 WE Write enable GND 6 43 I/O7 RY /BY7 42 I/O6 RE8 41 I/O5 RE Read enable CE9 40 NC NC 10 39 NC CLE Command latch enable NC 11 38 NC VCC 12 37 VCC ALE Address latch enable VSS 13 36 VSS NC 14 35 NC WP Write protect NC 15 34 NC CLE 16 33 NC RY /BY Ready/Busy ALE 17 32 I/O4 WE18 31 I/O3 WP19 30 I/O2 GND Ground Input NC 20 29 I/O1 NC 21 28 NC V Power supply CCNC 22 27 NC NC 23 26 NC V Ground SSNC 24 25 NC 2003-08-20A 1/33 TC58NVG0S3AFT05
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