Partno |
Mfg |
Dc |
Qty |
Available | Descript |
TC58MBM82F1TG00-BBH |
TOS|TOSHIBA |
N/a |
480 |
|
|
TC58NVG0S3AFT05 ,1 GBit CMOS NAND EPROMFEATURES • Organization • Powersupply V = 2.7 V to 3.6 V CCMemory cell array 2112 × 64K × 8 • Progr ..
TC58NVG0S3HTA00 ,SLC NANDFEATURES Organization x8 Memory cell array 2176 64K 8 Register 2176 8 Page size 2176 bytes ..
TC58NVG1S3BFT00 ,(TC58NVG1S8BFT00) 2 GBit CMOS NAND EPROMFEATURES • Organization TC58NVG1S3B TC58NVG1S8B Memory cell array 2112 × 128K × 8 1056 × 128K × 16 ..
TC58NVG1S3ETAI0 , NAND Flash Memory(SLC Middle Capacity)
TC58V32AFT ,32 Mbit CMOS NAND E2PROMTC58V32AFT/ADC32 Mbit (4M M 8bit) CMOS NAND EZPROMThe TC58V32AFT/ADC device is a single volt 32 M ( ..
TCA0372DW ,Dual Power Operational AmplifierMAXIMUM RATINGSRating Symbol Value UnitSupply Voltage (from V to V ) V 40 VCC EE SInput Differentia ..
TCA0372DWR2 ,1A Output Current, Dual Power Operational AmplifierTCA0372, TCA0372B1.0 A Output Current,Dual Power OperationalAmplifiersThe TCA0372 is a monolithic c ..
TCA0372DWR2 ,1A Output Current, Dual Power Operational AmplifierELECTRICAL CHARACTERISTICS (V = +15 V, V = −15 V, R connected to ground, T = −40° to +125°C.)CC EE ..