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TC58DVM92A1FT Fast Delivery,Good Price
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TC58DVM92A1FTTOSHIBAN/a5704avaiFlash


TC58DVM92A1FT ,FlashFEATURESOrganizationx Power supply V 2.7 V to 3.6 V CCMemory cell allay 528 u 128K u 8 Program/Er ..
TC58DVM92A1FT00 , MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVB160AFT-10 ,16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORYFEATURES • Power supply voltage • Block erase architecture 1 × 16 Kbytes / 2 × 8 Kbytes V = 2.7 V~3 ..
TC58FVB160AFT-70 ,16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORYTC58FVT160/B160AFT/AXB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2 ..
TC58FVB160AFT-70 ,16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORYfeatures commands for Read, Program and Erase operations to allow easy interfacing with microproces ..
TC58FVB160FT-10 ,16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORYTOSHIBA TC58FVT160/B1GOFT-85,-10,-1216-MBIT (2M M 8 BITS / 1M M 16 BITS) CMOS FLASH MEMORYThe TC58F ..
TC962EPA , HIGH CURRENT CHARGE PUMP DC-TO-DC CONVERTER
TC9WMA1FK ,1,024-Bit (128 ?8 Bit) Serial E2PROMBlock Diagram Chip selectTiming Control Power supply CSV Power supply CCgenerator circuit (booster ..
TC9WMB1AFU ,Serial EEPROM (TC9WM series)Features 2• 2-wire serial interface (I C BUS) • Single power supply Read: V = 1.8 to 3.6 V CC Wri ..
TC9WMB1FK ,1024-Bit (128 ?8 Bit) 2-Wire Serial E2PROMFeatures 2 TM 2-wire serial interface (I C BUS ) (Note 1)  Single power supply Read: V = 1.8 to ..
TC9WMB2AFK ,Serial EEPROM (TC9WM series)Block Diagram Address inputs A0 A1 A2Serial clock input SCL Timing Control Power supply V Power su ..
TC9WMB2FK ,2048-Bit (256 ?8 Bit) 2-Wire Serial E2PROMBlock Diagram Serial clock inputTiming Control Power supply SCLV Power supplyCCgenerator circuit ..


TC58DVM92A1FT
Flash
TC58DVM92A1FT00 Power supply VCC 2.7 V to 3.6 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 Ps max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ.
Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 PA max. Package TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M u 8 BITS) CMOS NAND E2 PROM
DESCRIPTION

The device is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte
increments. The Erase operation is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes u 32 pages). The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most
suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization Memory cell allay 528 u 128K u 8
Register 528 u 8 Page size 528 bytes Block size (16K  512) bytes Modes Read, Reset, Auto Page Program,
Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control
Serial input/output Command control
PIN ASSIGNMENT (TOP VIEW) PIN NAMES

000707EBA1
I/O8
I/O7
I/O6
I/O5
VCC
VSS
I/O4
I/O3
I/O2
I/O1
GND/RY
VCC
VSS
CLE
ALE
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