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TC554161AFT-10 |TC554161AFT10TOSHIBAN/a3198avai262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-10L |TC554161AFT10LTOSHIBAN/a5380avai262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-70 |TC554161AFT70TOSHIBAN/a3400avai262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-70L |TC554161AFT70LTOSHIBA ?N/a28avai262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-85 |TC554161AFT85TOSHIBAN/a5704avai262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-85L |TC554161AFT85LTOSHIBAN/a3400avai262,144-WORD BY 16-BIT STATIC RAM


TC554161AFT-85 ,262,144-WORD BY 16-BIT STATIC RAMapplications where high speed, low power and battery backup are required. The TC554161AFT is availa ..
TC554161AFT-85L ,262,144-WORD BY 16-BIT STATIC RAMFEATURES  Access Times (maximum):  Low-power dissipation Operating: 55 mW/MHz (typical) TC55416 ..
TC554161AFTI-10L ,262,144-WORD BY 16-BIT STATIC RAMapplications where high speed, low power and battery backup are required. And, with a guaranteed op ..
TC554161AFTI-70L ,262,144-WORD BY 16-BIT STATIC RAMfeatures using CE . -70,-70L -85,-85L -10,-10L Data retention supply voltage of 2 to 5.5 V Access ..
TC554161AFTI-85L ,262,144-WORD BY 16-BIT STATIC RAMTC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 ..
tc554161fti-85l ,262,144-WORD BY 16-BIT STATIC RAMTOSHIBA TC554161FTl-85L,-10L262,144-WORD BY 16-BIT STATIC RAMThe TC554161FTI is a 4,194,304-bit sta ..
TC9250P ,16 BITS RESISTER STRINGS DA CONVERTERTC9250F/PT(Q7RnF T(‘Q7EDPTC9250F, TC9250F is 16 bits resister strings DA converter TC9250Ffor digit ..
TC9256APG ,PLLTC9256, 57APG/AFG TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC9256APG, TC9256AFG, ..
TC9256f ,PLL FOR DTSTOSHIBA TC9256,57P/FTC9256P, TC9256F, TC9257F, TC9257FTC9256P, TC9256F, TC9257P and TC9257F are pha ..
TC9256P ,PLL FOR DTSTOSHIBA TC9256,57P/FTC9256P, TC9256F, TC9257F, TC9257FTC9256P, TC9256F, TC9257P and TC9257F are pha ..
TC9257AFG ,PLLBlock Diagram Note: There are no pins marked z in the TC9256APG or TC9256AFG. Pin names and numbe ..
TC9257AFG ,PLLBlock Diagram Note: There are no pins marked z in the TC9256APG or TC9256AFG. Pin names and numbe ..


TC554161AFT-10-TC554161AFT-10L-TC554161AFT-70-TC554161AFT-70L-TC554161AFT-85-TC554161AFT-85L
262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS�
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION

The TC554161AFT is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V � 10%
power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10
mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2 �A standby
current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select the device
and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB, ) provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. The TC554161AFT is available in a plastic 54-pin
thin-small-outline package (TSOP).
FEATURES
Low-power dissipation
Operating: 55 mW/MHz (typical) Single power supply voltage of 5 V � 10% Power down features using CE. Data retention supply voltage of 2 to 5.5 V Direct TTL compatibility for all inputs and outputs Standby Current (maximum):
PIN ASSIGNMENT (TOP VIEW) PIN NAMES

*: OP pin must be open of connected to GND. Access Times (maximum): Package:
TSOP II54-P-400-0.80 (AFT) (Weight: 0.57 g typ)A3A2A1A0I/O16I/O15VDDGNDI/O14I/O13R/WI/O12I/O11GNDVDDI/O10I/O9NCA17A16A15A14A13NC I/O1 I/O2 VDD GND I/O3 I/O4 OP NC I/O5 I/O6 GND VDD I/O7 I/O8 NC OE LB
(Normal pinout)
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