| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| TC55257BPL-80 |
TOSHIBA|TOSHIBA |
N/a |
80 |
 |
|
TC55257BPL-85L ,85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAMTOSHIBA'1rm?57BPL/BFL/BSPL/BF1LqmtL85L/10LiJN)SILICON GATE CMOS32,768 WORD x 8 BIT STATIC RAMDescri ..
TC55257BPL-85L. ,85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAMFeatures Pin Connection [Top View). Low power dissipation: 27.5mW/MH2 (typ.). Standby current: 211A ..
TC55257BSPL-10 , SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BSPL-10 , SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BSPL-10L ,100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAMfeatures with an operating current of5m/VMHz Exp.) and a minimum cycle time of 85ns.When CE is a lo ..
TC9153AP ,electronic volumei'5L7fif'i'i'"iFi7i'? DETOSHIBAIELECTRONIC VOLUME.The TC9153/54AP ls an optimum CZMOS IC which has ..
TC9153AP. ,electronic volumefeatures.. Attenuatibn can be feontrp11ed from OdB to -66dB by2dB/step.. 2 channels have been built ..
TC9154AP ,electronic volumefeatures.. Attenuatibn can be feontrp11ed from OdB to -66dB by2dB/step.. 2 channels have been built ..
