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TC4S11FTOSN/a14850avai2 INPUT NAND GATE


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TC4S11F
2 INPUT NAND GATE
TOSHIBA TC4S11F
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
"rC4S1ililF
2 INPUT NAND GATE
The TC4S11F is 2-input positive logic NAND gates.
Gate output with inverter buffer improve the input-
output characteristics and even if the load capacitance
increases, it can be stopped the change of propagation
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
DC Supply Voltage VDD Vss-th5--Vss+20 V
Input Voltage VIN Vss-O.5~VDD+0.5 V
Output Voltage VOUT I/SS - thr-VDD + 0.5 v . SSOP5-P-0S5
DC Input Current 'IN :10 mA Weight . 0.016g (Typ.)
Power Dissipation PD 200 mW
Operating Temperature Topr -40--85 ''C
Storage Temperature Tstg -6r-150 °C
Lead Temperature (10s) TL 260 °C
LOGIC DIAGRAM MARKING
IN A X=_-B T e Name
: )=icyr-4>-1 >o-oouT x
IN B Fl
PIN CONFIGURATION (TOP VIEW)
I:| H H
IN B EVDD
vss E OUT x
1 2001-05-31
TOSHIBA TC4S11F
RECOMMENDED OPERATING CONDITIONS (I/ss-HN)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
DC Supply Voltage VDD - 3 - 18 V
Input Voltage VIN - 0 - VDD V
STATIC ELECTRICAL CHARACTERISTICS (Vss =0V)
SYM- - 40°C 25°C 85°C
CHARACTERISTIC TEST CONDITION VDD UNIT
BOL (V) MIN. MAX. MIN. TYP. MAX. MIN. MAX.
. 5 4.95 - 4.95 5.00 - 4.95 -
1it2te1(t,ta e VOH ()ty=Tliy() 10 9.95 - 9.95 10.00 - 9.95 -
p g IN-- ss, DD 15 14.95 - 14S515.00 - 14.95 - v
5 - 0.05 - 0.00 0.05 - 0.05
(Liftivf/Imta e VOL £0”?ij IO - 0.05 - 0.00 0.05 - 0.05
p g IN-- DD 15 - 0.05 - 0.00 0.05 - 0.05
V0H=4.6V 5 -0.61 - -0.51 -1.0 - -0.42 -
Out tHi h VOH=2.5V 5 -2.5 - -2.1 -4.0 - -1.7 -
Cf put '9 10H V0H=9.5V 10 -1.5 - -1.3 -2.2 - -1.1 -
urren VOH=13.5V 15 -4.0 - -3.4 -9.0 - -2.8 -
VIN = I/ss, VDD mA
V0L=0.4V 5 0.51 - 0.51 1.2 - 0.42 -
OutputLow I V0L=0.5V 10 1.5 - 1.3 3.2 - 1.1 -
Current OL 1/OL=1.5V 15 4.0 - 3.4 12.0 - 2.8 -
VIN=VDD
VOUT=0.5V,4.5V 5 3.5 - 3.5 2.75 - 3.5 -
I tHi hV It v VOUT=1.0V,9.0V 10 7.0 - 7.0 5.5 - 7.0 -
npu If? t2 age IH 1/Otyr---1.5V,13.5V 15 11.0 - 11.0 8.25 - 11.0 -
I'OUT|<1#A v
VOUT=4.5V 5 - 1.5 - 2.25 1.5 - 1.5
VOUT=9.OV 10 - 3.0 - 4.5 3.0 - 3.0
InputLow Voltage VIL VOUT=13.5V 15 - 4.0 - 6.75 4.0 - 4.0
I'OUT|<1#A
Input HLeveI IIH 1hH=18V 18 - 0.1 - IO-s 0.1 - 1.0
Current LLeveI IIL 1/IL=01/ 18 - -0.1 - -10-s-0.1 - -1.0 pA
. 5 - 0.25 - 0.0010.25 - 7.5
1t,'.2e'it,,,en, IDD 1flN=1/ss'1/DD 10 - 0.5 - 0.001 0.5 - 15 pA
15 - 1.0 - 0.002 1.0 - 30
* All valid input combinations.
2 2001-05-31
TOSHIBA TC4S11F
DYNAMIC ELECTRICAL CHARACTERISTICS (Ta =25°C, VSS=OV, CL=50pF)
CHARACTERISTIC SYMBOL TEST CONDITION VDD (V) MIN. TYP. MAX. UNIT
Output Transition Time 5 - 70 200
(Low to High) tTLH - 10 - 35 100
15 - 30 80
Output Transition Time 5 - 70 200
(High to Low) tTHL - 10 - 35 100
15 - 30 80
5 - 65 200
Propagation Delay Time tpLH - 10 - 30 100
15 - 25 80
5 - 65 200 ns
Propagation Delay Time tpHL - 10 - 30 100
15 - 25 80
Input Capacitance CIN - - 5 7.5 pF
CIRCUIT AND WAVEFORM FOR MEASUREMENT OF
TEST CIRCUIT
WAVEFORM
DYNAMIC CHARACTERISTICS
OUTPUT
2001 -05-31
TOSHIBA TC4S11F
PACKAGE DIMENSIONS
SSOPS-P-0.95 Unit 2 mm
q----------'-"-----'
1.trlti?
A----)
10 4 - 5 1'2
0.1 CD cr
o . -Fl
-1-l f,", . - "t
a? tn CD
N ci ,
.“.‘ (o
R'? T'"'"
T""" It FJ v Lli'.
1.. - A A
Weight : 0.0169 (Typ.)
4 2001-05-31
TOSHIBA TC4S11F
RESTRICTIONS ON PRODUCT USE
000707EBA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-05-31
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