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TA8323F
LOW SATURATION VOLTAGE DRIVER FOR MOTOR
TOSHIBA
TA8323F
TENTATIVE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP
TA8323F
LOW SATURATION VOLTAGE DRIVER FOR MOTOR
TA8323F is Multi Chip IC incorporates 6 low saturation
discrete transistors which equipped bias resistor and free-
wheeling diode.
This IC is suitable for a battery use motor drive
applications.
FEATURES
0 Suitable for High Efficiency Motor Drive Circuit.
0 Built-in Free-Wheeling Diode
It Built-in Bias Resistor : R=10kQ
0 Small Package sealed : SSOP16
0 Low Saturation Voltage
BLOCK DIAGRAM
SSOP16-P-225-1.00A
Weight :
0.14g (Typ.)
PIN CONNECTION
IN2H v c IN3H v c
RN6006 RN6006 RN6006 IN1L [10 16E] IN1H
CE? (3% J Cfé own tit Is] OUT1
INIH (i? t FN x t lt GND te ME Vcc
OUT2 tes 13l OUT2
OUT3 IN2L ts 12l IN2H
RN5006 RN5006 RNSOOS Ci)
I/ V GND ts 11 il Vcc
INIL l c: N 1: Cl N 1? c: N Ir
3% 'iii 'i'] OUT3 tr 10B OUT3
IN3L ts sa] IN3H
IN2L GND IN3L GND
OUT1 OUT2
1 2001-06-27
TOSHIBA TA8323F
MAXIMUM RATINGS (Ta =25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VCC 10 V
VCBO 10 V
Breakdown Voltage VCEO 10 V
VEBO 6 V
Output Current lo 2 A
|o(peak) 4 (Note 1)
IB :0.4
Base Current |B(peak) $0.8 (Note 1) A
Diode Forward Current IF 2 (Note 2) A
Power Dissipation PD 490 mW
Junction Temperature Tj 150 "C
Operating Temperature Top, -40--85 "C
Storage Temperature Tstg - 55--150 "C
(Note 1) T=10ms Max. and maximum duty is less than 30%
(Note 2) T=10ms single pulse
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX UNIT
Current Gain hFE (1) - VCE =1V, IC = 0.5A 160 - 600
hFE (2) - VCE =1V, k: = 2.0A 60 130 -
. lc--IA, IB=25mA - 0.16 0.22
Upper Side lc=2A, IB=50mA - 0.28 0.45
Saturation . I =1A, IB=25mA - 0.13 0.32
Voltage Lower Side VCHW) - CC-fi', IB=50mA - 0.25 0.45 V
Summing lc--IA, IB=25mA - 0.29 0.52
Total k: = 2A, IB = 50mA - 0.53 0.85
Transition Frequency fT - VCE =2V, lc =0.5A - 150 - MHz
Leakage Upper Side I - Vcc=10V - 0 5
Current Lower Side OL vcc=10v - 0 5 PA
lF=300mA - 0.89 1.2
Diode Upper Side IF=450mA 10ms - 1.60 -
Forward VF - Pulse measure V
lF=300mA - 0.89 1.2
Voltage .
Lower Side IF=450mA 10ms
- 1.60 -
Pulse measure
Base-Emitter Resistance RBE - 7 10 13 k0
Base-Emitter Forward VBE (pr) - VCE = - 1V, IC = 2A - 0.84 1.5 V
Voltage VBE (NPN) - VCE =1V, Ic = 2A - 0.84 1.5
TOSHIBA
TRANSISTOR (RN5006)
hFE CHARACTERISTIC (LOWER SIDE)
TA8323F
TRANSISTOR (RN6006)
hFE CHARACTERISTIC (UPPER SIDE)
3000 3000
VCE=1V VCE=-1V
1000 Ta=100°C T 100°C
Le 500 Le 500 a--
300 300
'E 100 's 100
g 50 '',i, 50
u 30 U 30
1 3 10 30 100 300 1000 3000 -1 -3 -10 -30 -100 -300 -1000-3000
COLLECTOR CURRENT lc (mA) COLLECTOR CURRENT Ic (mA)
TRANSISTOR (RN5006) TRANSISTOR (RN6006)
VCE(sat) - Ic (LOWER SIDE) VCE (sat) - Ic (UPPER SIDE)
3000 -3000
hFE=40 hFE=40
E) 1000 E -1000
_ _ - A
riir-E- 500 55 -500
< C? 300 < c -300
ipN m (h m
m 49 Ta = 100°C at s'd'y
‘13 'd le ef Ta = 100°C
':> 100 L-es -100
a'ro, 50 deo, -50
O4 i:5rt
GF-. GF-.
86' 30 2e') -30
z,"' .-.d>
10 -10
1 3 IO 30 100 300 1000 3000 -I -3 -10 -30 -100 -300 -1000-3000
COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT lc (mA)
PD - Ta MFP-16 Rth - t
NO HEAT SINK Rth (j_a)=255°C/W (Note) INPUT PULSE
A 0.6 b' P =300mW
g g ,t (s) D
tg 1000
g 0.4 ad?
1: ge.'.
< tr: 100
th. Lu
Y2 "tt
a N E 30
5 0.2 5
it N a 10
0 50 100 150 200 0.01 0.1 1 10 100 1000
TEMPERATURE Ta CC) PULSE WIDTH t (s)
3 2001-06-27
TOSHIBA TA8323F
PACKAGE DIMENSIONS
SSOP16-P-225-1.00A Unit : mm
16 9 -
H H H H H H H H ' n N
cu rn. N i:
fi?, 53: ts f,
co lft m cu
iii. 111 _,ii-",.i, bl bl H H______ lr, Ir.
0.6TYP ! l l 4d:0. 1 C, th2O)
v, 8.7MAX 's9,
" 3.2io.2 M g
CM "". .
[ a ii' 12
yeacassaail. ut" GI '1
1-". 1- C9 !
us" ir-
50' ' Jh525hh2
Weight : 0.14g (Typ.)
4 2001-06-27
TOSHIBA TA8323F
RESTRICTIONS ON PRODUCT USE
000707EBA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-06-27
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