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TA8256TOSHIBAN/a9avaiAUDIO POWER AMPLIFIER 6W x 3CH


TA8256 ,AUDIO POWER AMPLIFIER 6W x 3CHapplications.Ims IC.' provides an output power ot b watts per channel(-4. \I--_')n\l L_1I,I_I- Tun_ ..
TA8256BH ,Audio Power Amplifier 6 W ?3 ChFeatures  High output power: P = 6 W (Typ.) out (V = 20 V、R = 8 Ω、f = 1 kHz、THD = 10%) CC L  B ..
TA8256H ,Audio Power ICs (3-channel)TA8256HTAR7EEH"W9gPM-tt-The TA8256H is 3 channel audio power amplifier for I IConsumer
TA8258H ,Dual Audio Power AmplifierFeatures  High output power: P = 20 W/channel (Typ.) out (V = 37 V, R = 8 Ω, f = 1 kHz, THD = 1 ..
TA8258H ,Dual Audio Power Amplifierapplications. This IC provides an output power of 20 watts per channel (at V = 37 V, f = 1kHz, THD ..
TA8258H ,Dual Audio Power Amplifier TA8258H TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8258H Dual Audio Power A ..
TC57512AD-15 ,65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORYFEATURES. Peripheral circuit: CMOSMemory cell t N-NOS. Fast access time:TC57512AD-15 150nsTC57512AD ..
TC581282AXB ,128-MBIT (16M ?8 BITS) CMOS NAND E2PROMFEATURES • Organization • Power supply VCC = 2.7 V to 3.6 V Memory cell allay 528 × 32K × 8 • Progr ..
TC58128AFT ,128-MBIT (16M x 8 BITS) CMOS NAND E2PROMTC58128AFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2128-MBIT (16M  8 B ..
TC5816BFT ,16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROMTC5816BFT16 MBIT (2 M M 8BITS) CMOS NAND FLASH EZPROMThe TC5816 device is a 1ingti 5.0-v01t 16 Mbit ..
TC5816BFT ,16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROMTC5816BFT16 MBIT (2 M M 8BITS) CMOS NAND FLASH EZPROMThe TC5816 device is a 1ingti 5.0-v01t 16 Mbit ..
TC582562AXB ,256-MBIT (32M x 8 BITS) CMOS NAND E2PROMFEATURES • Organization • Power supply VCC = 2.7 V to 3.6 V Memory cell allay 528 × 64K × 8 • Progr ..


TA8256
AUDIO POWER AMPLIFIER 6W x 3CH
TOSHIBA TA8256H
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
TA8256H
AUDIO POWER AMPLIFIER 6WX3CH
The TA8256H is 3 channel audio power amplifier for
Consumer applications.
This IC provides an output power of 6 watts per channel
(at vcc=20v, f=1kHz, THD=10%, RL=8Q)
It is suitable for power amplifier of TV and home Stereo.
FEATURES
0 Built-in 3ch Amplifier
dt High Output Power
Pout=5W (Typ.)
Ncc=201/, RL--8n, f=1kHz, THD=10%)
HZlP12-P-1.7BB
Weight : 4.04g (Typ.)
o Built-in Audio Mutiny Circuit.
It NF Terminal Capacitor Less
: Fixed Gain (GV=34dB), Needless External capacitor.
0 Protectors
Thermal shut down Protection circuit, Over Voltage Protection circuit
It Low Poping Noise
0 High THD Ratio
0 High input dynamic range
0 Available for using same PCB layout with 2 channel IC : TA8246H.
q Operating Supply Voltage Range
: 1/cc(opr)=10s301/ (Ta = 25°C)
961001 EBA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in tho
TOSHIBA Semiconductor Reliability Handbook.
0 The products described in this document are subject to foreign exchange and foreign trade control laws.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
1997-11-05 1/10
TOSHIBA TA8256H
BLOCK DIAGRAM
Ripple Filter
moiaur1o--a'-(i.
OUT1 f
g-(i) Pre-GND tlil-CL?: Pw-GNDQ
3509 20kQ
OUT2 f/i
INPUT? o--'''"'''"':,,),;- +
INPUT3 cy-rs-fl +
AMP 3 Q . + a -
35ml mm
re f?,
MUTE sw MUTE T.C.
MUTE +
J FMUTE OFF
1997-11-05 2/10
TOSHIBA
TERMINAL EXPLANATION
TA8256H
TERMD'NAL SYMBOL FUNCTION EQUIVALENT CIRCUIT
2 IN2 Input
3 Pre-GND GND terminal -
C? l' 1:
5 MUTE. SW "
MUTE control 10m I Mo MUTE Amplifier
terminal (D-'l'kke i'.
7 MUTE. T.C Je
6 RF Ripple filter _ ll tpiuet'"NolzE preventive
G) C ll to Bias circuit
3‘, C)
8 OUT1 Vcc
8, 11, 12
11 OUT3 Output
12 OUT2 V
Supply voltage
CC terminal
10 PW-GND GND terminal -
1997-11-05 3/10
TOSHIBA TA8256H
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VCC 30 V
Output Current (Peak/Ch) Ito(peak) 2 A
Power Dissipation PD (Note) 25 W
Operating Temperature Top, - 20--75 ''C
Storage Temperature Tstg - 55--150 ''C
(Note) Derated above Ta=25°C in the proportion of 200mW/°C.
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, VCC=20V, RL=8Q, Rg =6200, f=1kHz, Ta =25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Quiescent Current Iccq - Vin =0 65 100 180 mA
Pout (1) - THD = 10% 5 6 -
Output Power Pout(2) - THD=1% - 4.5 - W
Total Harmonic THD (1) - Pout-- 2W - 0.04 0.2 (y
Distortion THD(2) - Pout=2W, f=10kHz - 0.1 0.6 tl
Input Resistance Rin - - - 34 - kn
f=100Hz
Ri Ie Reiection Ratio R.R. - -40 -47 - dB
pp J mm.e = 0.775vrms
Output Noise Voltage Vno - BW=20Hz--20kHz - 0.14 0.3 mVrms
Cross Talk C.T. - Vout= 0.775Vrms - - 60 - dB
Vth (ON) - MUTE ON 3.1 - VCC
Mute Control Voltage Vth (OFF) - MUTE OFF 0 - 2.5 V
Mute Attenuation Level ATT - Vout=0.775Vrms-9MUTE -52 - 60 - dB
1997-11-05 4/10
TOSHIBA TA8256H
TEST CIRCUIT
LL u. OVCC
Q, + + tt
E I l o
'W' 'db'
Ripple Filter
- + 4m
moiaur1o-.-yt-(i.
1.0m OUT1/\ "e"
'db' s"-
s;-e, Pre-GND tlil-CL?: Pw-GNDQ
3509 20kQ
2.20 0.10M
AMP2 u
1000pF
INPUT? o-,-nt:-(2', + W
INPUT3 1
1-0pzF
1000/zF
AMP 3 ou "
30k0 {
3509 20m R
MUTE sw MUTE T.C. c,
MUTE +
ll FMUTE OFF
1997-11-05 5/10
TOSHIBA
TA8256H
QUIESCENT CURRENT
TOTAL HARMONIC DISTORTION THD
'ccq. VOUT(DC) - VCC
VOUT (DC)
0 4 812162024283236
SUPPLY VOLTAGE VCC (v)
THD - POUT
f=10kHz
f=100Hz
0.3 0.5 1 3 5 10
OUTPUT POWER POUT (W)
OUTPUT VOLTAGE VOUT (DC)
TOTAL HARMOMC DISTORTION THD (%)
TOTAL HARMONIC DISTORTION THD (%)
30 50 100
0.3 0.5
300 500 1k 3k 5k 10k
FREQUENCY f (Hz)
30k 50k 100k
THD - POUT
1 3 5 IO 30
OUTPUT POWER POUT (W)
1997-11-05 6/10
TOSHIBA TA8256H
POUT - Vcc GV - f
f=1kHZ Vcc=20V
RL=80 VOUT=0~775Vrms
A THD=10t% (MM)
ie.. a .i5 RL=8Q
10 12 14 16 18 20 22 24 26 28 30 32 34 36 3050 100 3005001k 3k 5k 10k 30k50k100k
SUPPLY VOLTAGE Vcc (V) FREQUENCY f (Hz)
R.R. - f CT. - f
VCC = 20V Vcc = 20V
Ei' RL=BQ -10 RL=80
72. R =0 VOUT= 0.775Vrms
_ Vripple=0-775Vrms A (OdBm)
E (OdBm) s3 -20 Rg=10k0
Q y-." -30
a E -40
U V’ -
l', 'i', 50
LIf -60
a: -70
3050 100 300 500 1k 3k 5k 10k 30k50k100k 30 50 100 300 500 1k 3k 5k 10k 30k50k100k
FREQUENCY f (Hz) FREQUENCY f (Hz)
VNO - Rg R.R. - Rg
Gh Vcc=20V v =2ov
E A CC
' RL=80 93 RL=8§2
g B.W. = 20~20kHz - fripple =100HZ
ai. Vripple = 0.rr5vrms
Ji n: (OdBm)
3050 100 300 500 1k 3k 5k 10k 30k50k100k 30 50 100 300 500 1k 3k 5k 10k 30k 50k100k
SIGNAL SOURCE RESISTANCE R9 (n) SIGNAL SOURCE RESISTANCE Rg (Q)
1997-11-05 7/10
TOSHIBA
TA8256H
Vcc = 20V
f- 1kHz
RL = MI
VOUT = 0.775Vrms
(OdBm)
CROSS TALK C.T, (dB)
30 50 100 300 500 1K 3K 5K 10K 30K50K100K
SIGNAL SOURCE RESISTANCE Rg (Q)
PD (MAX) - Vcc
MAXIMUM POWER DISSIPATION
PD(MAX) (W)
8 12 16 20 24 28 32
SUPPLY VOLTAGE Vcc (V)
VNO - Ta
OUTPUT NOISE VOLTAGE VNO (mvrms)
- 4O - 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (''C)
POWER DISSIPATION PD
QUIESCENT CURRENT
TOTAL HARMONIC DISTORTION THD (%)
PD - POUT
0 2 4 6 8 10 12 14
OUTPUT POWER POUT (W)
lccq - Ta
- 40 - 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta CC)
THD - Ta
Vcc=20V
5 RL=80
3 f=1kHz
POUT=2W
Operating
1 all channel
- 40 - 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
1997-11-05 8/10
TOSHIBA TA8256H
PD MAX - Ta
(O INFINITE HEAT SINK
© 4.1°C/w Al HEAT
© 9.5°C/W AI HEAT
POWER DISSIPATION PD MAX (W)
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE Ta (°C)
1997-11-05 9/10
TOSHIBA TA8256H
OUTLINE DRAWING
HZIP12-P-1.78B Unit : mm
15.72:K.?
1 .5 I YP
q--------
I i . l I
- 2.075TYP
a4ti,lvl
1.42TYP ""'_Hh05
143:03 _
1.45i0.2
11 31:0 3
6 5:03
0.55:0.1 giEotCi7EiEijl
1.11m _
22.9MAX
h 22.4w: _,
Weight : 4.04g (Typ.)
1997-11-05 10/10

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