TA4007F ,TV,FM TUNER VHF RF AMPLIFIER APPLICATIONSFEATURESo On account of this Device built in Bias Circuit, Cut downnumber of articles.a Low Noise F ..
TA4008F ,1.6GHz BAND BUFFER AMPLIFIER APPLICATIONS)FEATURES
0 Low current : lcc=9mA(Typ.)
a Recommended operating voltage : vcc=2.7~3.3vPIN ASSIGN ..
TA4011FU ,UHF Wide Band Amplifier ApplicationsFeatures Low current: I = 3.5 mA CCWide band: f = 2.4 GHz (3dB down) Operatin supply voltage ..
TA4012FU ,UHF Wide Band Amplifier ApplicationsFeatures Low current: I = 6.5 mA CCWide band: f = 2.0 GHz (3dB down) Operatin supply voltage ..
TA4014FT ,Use for Crystal OscillatorsFeatures Bias resistors, a transistor for oscillation and a transistor for buffer are packed in ..
TA4015FE ,Use for Crystal OscillatorsFeatures Bias resistors, a transistor for oscillation and a transistor for buffer are packed in ..
TC4SU11F ,2 INPUT NAND GATELOGIC DIAGRAM PIN ASSIGNMENT (TOP VIEW)VDD
SVD
INBII IID“A-| [-l-"3-oouTxIDI AZEE I/SS sl In OU ..
TC4SU69F ,INVERTER GATEPIN CONFIGURATION (TOP VIEW) MarkingNC II Is VDD
Type Name
/—INAVss II III OUT XTC4SU69FRECOMME ..
TC4W53F ,2-CHANNEL MULTIPLEXER/DEMULTIPLEXERTC4W53F/FUThe TC4W53 is multiplexer with capabilities of selection
and mixture of analog signal an ..
TC4W53FU ,2-CHANNEL MULTIPLEXER/DEMULTIPLEXERTC4W53F/FUThe TC4W53 is multiplexer with capabilities of selection
and mixture of analog signal an ..
TC4W66F ,DUAL BILATERAL SWITCHTC4W66F/FUT(‘AWEEF T(‘AWEEFII- I
I-vvl
“I--
vv-
vThe_ TC4W66 contains two independence ..
TC4W66FU ,DUAL BILATERAL SWITCHLOGIC DIAGRAM PIN ASSIGNMENT (TOP VIEW) TRUTH TABLE(1/2 TC4W66F) IMPEDANCE
IN/OUT1 E Van CONTROL B ..
TA4007F
TV,FM TUNER VHF RF AMPLIFIER APPLICATIONS
TOSHIBA TA4007F
TOSHIBA MOS TYPE INTEGRATED CIRCUIT SILICON MONOLITHIC
TA4007F
TV TUNER VHF RF AMPLIFIER APPLICATIONS.
FM TUNER RF AMPLIFIER APPLICATIONS.
FEATURES
0 On account of this Device built in Bias Circuit, Cut down
number of articles.
0 Low Noise Figure : NF=1.3dB (Typ.)
0 Operating Voltage : VDD--6-1IV
PIN ASSIGNMENT (TOP VIEW) MARKING
GATE 2 GATE 1 TYPE NAME
m m Fl 'ss'"'
u C SSOP5-P-0S5
tll Ill Al 1:1 ix! ti Weight : 0.014g (Typ.)
DRAIN GND SOURCE
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VDD 11 V
Gate 2-Source Voltage V625 18 V
Supply Current IDD 30 mA
Power Dissipation PD* 250 mW
Operating Temperature Topr -40-85 ''C
Storage Temperature Range Tstg -55--125 °C
* When mounted on the glass epoxy board of 2.5cm2x1.6t
961001 EBA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind tho precautions and conditions set forth in tho
TOSHIBA Semiconductor Reliability Handbook.
0 The products described in this document are subject to foreign exchange and foreign trade control laws.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
tt T e information contained herein is subject to change without notice.
1997-07-22 1/5
TOSHIBA TA4007F
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX UNIT
Gate 2 Leakage Current IGZSS - VDS--0, V615=0, VG2S-- 16V - - -+50 nA
Gate 2-Source Cut-off
Voltage VG2S (OFF) - VDD = 5V, IDD =150PA 0.5 1.0 1.5 V
Supply Current IDD - VDD =9V, VG2 =7V 6 - 14 mA
Input Capacitance Ciss - VDD =9V, VG2 =7V 2.4 3.4 4.0 pF
Output Capacitance Coss - f=1MHz 1.5 2.0 2.5 pF
Power Gain Gps 1 VDD =9V, VG2 =7V 24 28.0 - dB
Noise Figure NF 1 f=200MHz - 1.3 2.2 dB
IDD Classifications : Y : 6~10mA, GR : 8--12mA, BL : 10--14mA.
EQUIVALENT CIRCUIT
--"tir.Io, D
G2 f,'--'
G1 0 I O S
n2“: :3.“
TEST CIRCUIT 1
200MHz, Gps, NF
OUTPUT
RL=SOQ
INPUT C J"
Rg=500
: 1000pF+10000pF
: 1mm¢ Ag Plated Copper Wire, 2 Turns, 8mm ID
: 1mm¢ Ag Plated Copper Wire, 2.5 Turns, 8mm ID
1997-07-22 2/5
TOSHIBA
IDD - VDD
COMMON SOURCE
VG2--7-OV
Ci" f=200MHz
g. Ta=25°C
2 4 6 8 10 12 14
SUPPLY VOLTAGE VDD (v)
G.R. - 1/G2
GATE 2 VOLTAGE V62 (v)
-2 0 2 4 6 8 10
Le COMMON SOURCE
(f, VDD=9.0V
f=200MHZ
Ta = 25°C
POWER GAIN Gps (d8)
INPUT SUSCEPTANCE bis
FORWARD TRCNSFER SUSCEPTANCE
TA4007F
Gps - VDD, NF - VDD
IDD--8mA
COMMON SOURCE 3
V5; =7.OV u_
f=200MHz a
Ta = 25°C u,
IDD--8mA Ll?
2 4 6 8 10 12 14
SUPPLY VOLTAGE VDD (v)
COMMON SOURCE
VDD=9.0V
VG2=7.0V
Ta =25°C
100MHz STEP
1000MH2
100MHz
O 2 4 6 il 10 12 14
INPUT CONDUCTANCE gis (mS)
Yis - f
FORWARD TRANSFER CONDUCTANCE 9fs (m5)
-4 0 4 8 12 16 20 24
COMMON SOURCE
VDD=9.0V
VG2 =7.0V
Ta=25°C
100MHz STEP
1000MHz
100MHz
1997-07-22 3/5
TOSHIBA
G" 1000MHZ
m COMMON SOURCE
é VDD=9.0V
's V62 = 7.0V
Ta=25°C
100MHz
100MHz STEP
-0.4 0 0.4 0.8 1.2 1.6 2.0
OUTPUT CONDUCTANCE gos (ms)
REVERSE TRANSFER SUSCEPTANCE
TA4007F
Yrs - f
REVERSE TRANSFER CONDUCTANCE grs (ms)
-0.2 0 0.2 0.4 0.6 0.8 1.0
1000MH2
100MHz
COMMON SOURCE
VDD=9.0V
V52=7.0V
Ta = 25°C
100MHz STEP
1997-07-22 4/5
TOSHIBA TA4007F
OUTLINE DRAWING
SSOP5-P-0.95 Unit : mm
_-. I 5 T"""
fi) - it!
- Erie"
T""" v r-..f " I, _.O IL
T"'' " n
Weight : 0.0149 (Typ.)
1997-07-22 5/5
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