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T835H-6I
High-temperature 8A Triacs
T835H, T850HHigh temperature 8 A Snubberless™ T riacs
Features Medium current Triac 150 °C max. Tj turn-off commutation Low thermal resistance with clip bonding Very high 3 quadrant commutation capability Packages are RoHS (2002/95/EC) compliant UL certified (ref. file E81734)
ApplicationsEspecially designed to operate in high power
density or universal motor applications such as
vacuum cleaner and washing machine drum
motor, these 8 A Triacs provide a very high
switching capability up to junction temperatures of
150 °C.
The heatsink can be reduced, compared to
traditional Triac, according to the high
performance at given junction temperatures.
DescriptionAvailable in through-hole or surface mount
packages, the T835H and T850H Triacs series
are suitable for general purpose mains power ac
switching.
By using an internal ceramic pad, the T8xxH-6I
provides voltage insulation (rated at 2500 V rms).
TM: Snubberless is a trademark of STMicroelectronics Table 1. Device summary
Characteristics T835H, T850H
1 Characteristics
Table 2. Absolute maximum ratings
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) minimum IGT is guaranted at 20% of IGT max. for both polarities of A2 referenced to A1.
T835H, T850H Characteristics
Table 4. Static characteristics for both polarities of A2 referenced to A1 tp = 380 µs
Table 5. Thermal resistance
Characteristics T835H, T850H
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
Figure 3. On-state rms current versus
ambient temperature
Figure 4. Variation of thermal impedance
versus pulse duration
Figure 5. On-state characteristics
(maximum values)
Figure 6. Surge peak on-state current versus
number of cycles
T835H, T850H Characteristics
Figure 7. Non-repetitive surge peak on-state
current for a sinusoidal pulse with
Figure 8. Relative variation of IGT,IH, IL vs
junction temperature
(typical values)
Figure 9. Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
Figure 10. Relative variation of critical rate of
decrease of main current versus
junction temperature
Figure 11. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
Figure 12. Variation of thermal resistance
junction to ambient versus copper
surface under tab
Ordering information scheme T835H, T850H Ordering information scheme
Figure 13. Ordering information scheme
