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T410H-6T
High-temperature 4A sensitive Triacs
May 2009 Doc ID 15712 Rev 1 1/9
T410HHigh temperature 4 A sensitive TRIACs
Features Medium current TRIAC Logic level sensitive TRIAC 150 °C max. Tj turn-off commutation Clip bounding RoHS (2002/95/EC) compliant package
Applications The T410H is designed for the control of AC
actuators in appliances and industrial systems. The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through this sensitive gate
TRIAC.
DescriptionSpecifically designed to operate at 150 °C, the
new 4 A T410H TRIAC provides an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electro-
mechanical solutions.
Based on ST logic level technology, the T410H
offers an IGT lower than 10 mA and specified
minimal commutation and high noise immunity
levels valid up to the Tj max.
Table 1. Device summary
Characteristics T410H
2/9 Doc ID 15712 Rev 1
1 Characteristics
Table 2. Absolute maximum ratings
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) For both polarities of A2 referenced to A1.
T410H Characteristics
Doc ID 15712 Rev 1 3/9
Table 4. Static characteristics for both polarities of A2 referenced to A1.
Table 5. Thermal resistance
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
Figure 3. On-state rms current versus
ambient temperature (free air
convection, full cycle)
Figure 4. Relative variation of thermal
impedance, versus pulse duration
Characteristics T410H
4/9 Doc ID 15712 Rev 1
Figure 5. Relative variation of gate trigger
current and voltage versus junction
temperature (typical values)
Figure 6. Relative variation of holding and
latching current versus junction
temperature (typical values)
Figure 7. Surge peak on-state current
versus number of cycles
Figure 8. Non-repetitive surge peak on-state
current and corresponding value
of I2t
Figure 9. On-state characteristics
(maximum values)
Figure 10. Relative variation of critical rate of
decrease of main current versus
junction temperature
T410H Characteristics
Doc ID 15712 Rev 1 5/9
Figure 11. Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values)
Figure 12. Relative variation of static dV/dt
immunity versus junction
temperature
Figure 13. Variation of leakage current versus
junction temperature for different
values of blocking voltage
Figure 14. Acceptable case to ambient thermal
resistance versus repetitive peak
off-state voltage
Ordering information scheme T410H
6/9 Doc ID 15712 Rev 1 Ordering information scheme
Figure 15. Ordering information scheme
