RN2112 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsRN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112,RN2113 Switchin ..
RN2112MFV ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN2113 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN2113 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN2113FT ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Unit: mm High-density mount is possible because of devices housed in very thin T ..
RN2113MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― Characteristic Symbol Rating Unit TOSHIBA 2-1L ..
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RN2112-RN2113
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN21 12,RN21 13 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112, RN1113
Equivalent Circuit
Maximum Ratings (Ta = 25��� �C) Tstg
Electrical Characteristics (Ta = 25��� �C)
Weight: 2.4mg
Unit: mm
