RN1911FS ,Bias resistor built-in transistor (BRT), 2-in-1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min T ..
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RN1962FS ,Bias resistor built-in transistor (BRT), 2-in-1Absolute Maximum Ratings (Ta = 25°C) Equivalent Circuit (Q1, Q2 common) (top view) Characteristic ..
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RN1911FS
Bias resistor built-in transistor (BRT), 2-in-1
RN1910FS,RN1911FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1910FS,RN1911FS Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin)
package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost. Complementary to RN2910FS, RN2911FS
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Unit: mm
Weight: 0.001g (typ.) 5 4
1 2 3
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Equivalent Circuit
