RN1906AFS ,Bias resistor built-in transistor (BRT), 2-in-1absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
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RN1907 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1907~RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Un ..
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RTL8201 , REALTEK SINGLE CHIP SINGLE PORT 10/100M FAST ETHERNET PHYCEIVER RTL8201BL
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RTM002P02 , 2.5V Drive Pch MOS FET
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RTM002P02T2L , 2.5V Drive Pch MOS FET
RTQ020N03 , 2.5V Drive Nch MOS FET
RN1902AFS-RN1903AFS-RN1904AFS-RN1906AFS
Bias resistor built-in transistor (BRT), 2-in-1
RN1901AFS~RN1906AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package. Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and saves assembly costs. Complementary to the RN2901AFS~RN2906AFS
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.001 g (typ.)
R1
R2 5 4
1 2 3
