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RN1112CTTOSHIBAN/a70000avaiBias resistor built-in transistor (BRT)
RN1113CTTOSHIBAN/a70000avaiBias resistor built-in transistor (BRT)


RN1112CT ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
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RN1113 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112,RN1113 Switching, ..
RN1113CT ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Weight: 0.75 mg (typ.) Characteristics Symbol Rating Unit Coll ..
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RN1112CT-RN1113CT
Bias resistor built-in transistor (BRT)
RN1112CT ,RN1113CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1112CT, RN1113CT

Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost. Complementary to RN2112CT, RN2113CT
Equivalent Circuit

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.75 mg (typ.)
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