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RN1111FTTOSHIBAN/a44000avaiTransistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.


RN1111FT ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications.  High-density mount is possible because of devices housed in very thin TESM pack ..
RN1111MFV ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1112 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN1112CT ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1112FS , Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1112FT ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications.  High-density mount is possible because of devices housed in very thin TESM pack ..
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RN1111FT
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1110FT,RN1111FT

Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications. High-density mount is possible because of devices housed in very thin
TESM packages. Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost. Wide range of resistor values are available to use in various circuit
designs. Complementary to RN2110FT, RN2111FT
Equivalent Circuit and Bias Resistor Values

Maximum Ratings (Ta �
�� � 25°C) Tstg
Note: Total rating
Unit: mm
Weight: g (typ.)
R1 B
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