RN1110F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of part ..
RN1110MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C)Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collec ..
RN1111 ,BUSSED RESISTOR NETWORKRN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit: mmS ..
RN1111CT ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Weight:0.75 mg (typ.) Characteristics Symbol Rating Unit Colle ..
RN1111F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switch ..
RN1111FT ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. High-density mount is possible because of devices housed in very thin TESM pack ..
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RN1110F-RN1111F
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1110F ,RN1111F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1110F ,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F
Equivalent Circuit
Maximum Ratings (Ta = 25°C) Tstg
Electrical Characteristics (Ta = 25°C) ― ―
Unit: mm
