| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| RN1111 TE85L.F |
TOSHIBA|TOSHIBA |
N/a |
188000 |
 |
|
RN1111CT ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Weight:0.75 mg (typ.) Characteristics Symbol Rating Unit Colle ..
RN1111F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switch ..
RN1111FT ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. High-density mount is possible because of devices housed in very thin TESM pack ..
RN1111MFV ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1112 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
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