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RN1101ACT-RN1106ACT
Bias resistor built-in transistor (BRT)
RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101ACT , RN1102ACT , RN1103ACT RN1104ACT , RN1105ACT , RN1106ACT Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts,
which enables the manufacture of ever more compact equipment and
saves assembly cost. Complementary to RN2101ACT to RN2106ACT
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) Note1: Mounted on FR4 board (10 mm × 10 mm × 1 mm)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.75 mg (typ.)
R1
R2
