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RMPA2550FAIRCHILDN/a1680avaiDual Band HBT Linear Power Amp


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RMPA2550
Dual Band HBT Linear Power Amp
RMPA2550 August 2004 RMPA2550 2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier • 27 dB modulated gain 5.15 to 5.85 GHz band General Description • 26 dBm output power @ 1 dB compression both The RMPA2550 is a dual frequency band power amplifier frequency bands designed for high performance WLAN applications in the • 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The • 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz single low profile 20 pin 3 x 4 x 0.9 mm package with • 3.3 V single positive supply operation internal matching on both input and output to 50Ω • Adjustable bias current operation minimizes next level PCB space and allows for simplified • Two power saving shutdown options (bias and logic integration. The two on-chip detectors provide power control) sensing capability while the logic control provides power • Separate integrated power detectors with 20 dB dynamic saving shutdown options. The PA’s low power consumption range and excellent linearity are achieved using our InGaP • Low profile 20 pin, 3 x 4 x 0.9 mm standard Heterojunction Bipolar Transistor (HBT) technology. Device QFN leadless package • Internally matched to 50 ohms Features • Optimized for use in 802.11a/b/g • Dual band operation in a single package design applications • 26 dB modulated gain 2.4 to 2.5 GHz band 1,3 Electrical Characteristics 802.11g/a OFDM Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth Parameter Minimum Typical Maximum Minimum Typical Maximum Unit Frequency 2.4 2.55.15 5.85 GHz Supply Voltage 3.0 3.3 3.6 3.0 3.3 3.6 V Gain 24.5 26 28 25.5 27 29 dB Total Current @ 18dBm P 150 182 228 260 mA OUT Total Current @ 19dBm P 157 189 235 267 mA OUT 2 EVM @ 18dBm P 2.0 2.5 2.5 3.5 % OUT 2 EVM @ 19dBm P 3.0 3.5 3.5 4.5 % OUT Detector Output @ 19dBm P 508 600 780 865 mV OUT 4 Detector Threshold 5.0 7.0 5.0 7.0 dBm 5,7 P Spectral Mask Compliance 21.0 21.0 dBm OUT 3,6 Electrical Characteristics 802.11b CCK Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth Parameter Minimum Typical Maximum Unit Frequency 2.4 2.5GHz Supply Voltage 3.0 3.3 3.6 V Gain 24.5 26 28 dB Total Current 250 mA First Sidelobe Power -40 dBc Second Sidelobe Power -55 dBc 7 Max P Spectral Mask Compliance 24.0 dBm OUT Notes: 1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50Ω system. VL adjusted for either 2.4 or 5 GHz operation. 2: Percentage includes system noise floor of EVM=0.8%. 3: Not measured 100% in production. 4: P measured at P corresponding to power detection threshold. OUT IN 5: Measured at P at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. IN 6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, P =+23 dBm, 50Ω system. Satisfies spectral mask. OUT 7: P is adjusted to point where performance approaches spectral mask requirements. IN ©2004 RMPA2550 Rev. D
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