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RMPA2455FSC ?N/a15420avai2.4


RMPA2455 ,2.4Electrical Characteristics Single Tone Parameter Min Typ Max UnitsFrequency 2.42.5GHzCollector Supp ..
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RMPA2455
2.4
RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier January 2005 RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Features General Description ■ 30 dB small signal gain The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the 2.4–2.5 ■ 30 dBm output power @ 1 dB compression GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm ■ 3% EVM at 22 dBm modulated power out package with internal matching on both input and output to 50Ω ■ 5.0 V positive collector supply operation minimizes next level PCB space and allows for simplified ■ Two power saving shutdown options (bias and logic control) integration. The on-chip detector provides power sensing capability while the logic control provides power saving ■ Integrated power detector with 20 dB dynamic range shutdown options. The PA’s low power consumption and ■ Low profile 16 pin 3 x 3 x 0.9 mm leadless package excellent linearity are achieved using our InGaP Heterojunction ■ Internally matched to 50Ω and DC blocked RF input/output Bipolar Transistor (HBT) technology. ■ Optimized for use in 802.11b/g Access Point applications Device 1 Electrical Characteristics 802.11g OFDM Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Min Typ Max Units Frequency 2.4 2.5 GHz Collector Supply Voltage 4.5 5.0 5.5 V Mirror Supply Voltage 2.8 3.3 3.6 V Gain 30 dB Total Current @ 22dBm P 195 mA OUT 2 EVM @ 22dBm P 3.0 % OUT Detector Output @ 22dBm P 960 mV OUT 3 Detector Threshold 4 dBm Notes: 1. VC1, VC2 = 5.0 Volts, VM12 = 3.3V, T = 25°C, PA is constantly biased, 50Ω system. A 2. Percentage includes system noise floor of EVM = 0.8%. 3. P measured at P corresponding to power detection threshold. OUT IN ©2004 1 RMPA2455 Rev. D
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