RMPA2451 ,ISM Band PA (Partially Matched)Electrical CharacteristicsParameter Min Typ Max UnitsFrequency Range 2400 2500 MHz1Gain 28.5 33 dB1 ..
RMPA2451 ,ISM Band PA (Partially Matched)FeaturesFairchild Semiconductor’s RMPA2451 is a partially • 38% power added efficiencymatched monol ..
RMPA2451 ,ISM Band PA (Partially Matched)applications.External matching components are required to optimize the• Low power mode: 0 dBmRF per ..
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RMPA2451
ISM Band PA (Partially Matched)
RMPA2451 April 2004 RMPA2451 2.4–2.5 GHz GaAs MMIC Power Amplifier General Description Features Fairchild Semiconductor’s RMPA2451 is a partially • 38% power added efficiency matched monolithic power amplifier in a surface mount • 29dBm typical output power package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for • Small package outline: 0.28" x 0.28" x 0.07" linear, class AB or class F for high efficiency applications. External matching components are required to optimize the • Low power mode: 0 dBm RF performance. The MMIC chip design utilizes our 0.25µm power Pseudomorphic High Electron Mobility (PHEMT) process. Device Absolute Ratings Symbol Parameter Min Max Units Vd1, Vd2 Positive Drain DC Voltage 0 +8 V Vg1, Vg2 Negative Gate DC Voltage -5 0 V Vd–Vg Simultaneous Drain to Gate Voltage +10 V P RF Input Power (from 50Ω source) +10 dBm IN Id1 Drain Current, First Stage 75 mA Id2 Drain Current, Second Stage 525 mA Ig Gate Current 5 mA T Channel Temperature 175 °C C T Operating Case Temperature -40 85 °C CASE T Storage Temperature Range -40 125 °C STG R Thermal Resistance (Channel to Case) 33 °C/W JC ©2004 RMPA2451 Rev. B
