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RMPA2450FAIN/a1000avaiISM Band PA (Fully Matched)
RMPA2450RAYTHEONN/a1000avaiISM Band PA (Fully Matched)
RMPA2450RAYN/a1944avaiISM Band PA (Fully Matched)
RMPA2450FAIRCHILDN/a987avaiISM Band PA (Fully Matched)


RMPA2450 ,ISM Band PA (Fully Matched)Block Diagram (RMPA2450)TOP VIEWPin# Description1 GND0.200 SQ.2 RF OutBOTTOM VIEW3 GND6 5 4 45 6 4 ..
RMPA2450 ,ISM Band PA (Fully Matched)applications. On-chip matching components• Small Package Outline: 0.28" x 0.28" x 0.07"allow operat ..
RMPA2450 ,ISM Band PA (Fully Matched)applications in the 2.4 to 2.5GHz ISM frequency band. The • 28dBm Output Power (P1dB) at Vd = +5Va ..
RMPA2450 ,ISM Band PA (Fully Matched)Electrical Characteristics (Note 4, At 25°C, Z = 50Ω , Unless Otherwise Noted) OParameter Min Typ M ..
RMPA2451 ,ISM Band PA (Partially Matched)Electrical CharacteristicsParameter Min Typ Max UnitsFrequency Range 2400 2500 MHz1Gain 28.5 33 dB1 ..
RMPA2451 ,ISM Band PA (Partially Matched)FeaturesFairchild Semiconductor’s RMPA2451 is a partially • 38% power added efficiencymatched monol ..
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RMPA2450
ISM Band PA (Fully Matched)
RMPA2450 May 2004 RMPA2450 2.4–2.5 GHz GaAs MMIC Power Amplifier General Description Features The Fairchild RMPA2450 is a fully monolithic power • 35% Power Added Efficiency amplifier in a surface mount package for use in wireless • 31dBm Output Power (P1dB) at Vd = +7V applications in the 2.4 to 2.5GHz ISM frequency band. The • 28dBm Output Power (P1dB) at Vd = +5V amplifier may be biased for linear, class AB or class F for • No external RF matching components high efficiency applications. On-chip matching components • Small Package Outline: 0.28" x 0.28" x 0.07" allow operation in a 50Ω system with no external matching • Thermal Resistance (Channel to Case): 33°C/W components. The MMIC chip design utilizes our 0.25µm power PHEMT process. Device Absolute Ratings Symbol Parameter Rating Units Vd1, Vd2 Positive Drain DC Voltage +8 V Vg1, Vg2 Negative Gate DC Voltage -5 V Vd–Vg Simultaneous Drain to Gate Voltage +10 V P RF Input Power (from 50Ω source) +10 dBm IN Ids Drain to Source Current 575 mA Ig Gate Current 5 mA Tch Channel Temperature 150 °C T Operating Case Temperature -40 to 100 °C CASE T Storage Temperature Range -40 to 125 °C STG ©2004 RMPA2450 Rev. C
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