RMPA0967 ,CDMA and CDMA2000-1X Power Amplifier Modulefeatures a low-powerpower mode to reduce standby current and DC power con-■ 52% AMPS mode efficiency ..
RMPA0967 ,CDMA and CDMA2000-1X Power Amplifier ModuleBlock Diagram(Top View)MMIC1 8 GNDVrefDC Bias ControlOutputVmode 2 7 RF OUTMatchInputRF IN 3 6GNDMa ..
RMPA1759 ,3.4V Korean PCS CDMA PA ModuleBlock DiagramGNDPA MODULEVCC1, VCC2COLLECTOR(3,6, 7,9,11)(1, 10) BIASINTERSTAGEMATCHINPUT OUTPUTINP ..
RMPA1759 ,3.4V Korean PCS CDMA PA Modulefeatures a low-power mode toreduce standby current and DC power consumption during standard pinoutp ..
RMPA1759 ,3.4V Korean PCS CDMA PA Moduleapplications. The 2 stage• 38% CDMA efficiency at +28dBm average output powerPAM is internally matc ..
RMPA1765 ,28dBm K-PCS Power Amplifier ModuleBlock Diagram(Top View)PA MODULEMMIC1 8 Vcc2Vcc1Input Output2 RF OUT7RF INMatchMatchVmode 3 6 GNDDC ..
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RMPA0967
CDMA and CDMA2000-1X Power Amplifier Module
RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module February 2005 RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Features General Description ■ Single positive-supply operation with low power and shut- The RMPA0967 power amplifier module (PAM) is designed for down modes cellular band AMPS, CDMA, CDMA2000-1X and WCDMA applications. The 2 stage PAM is internally matched to 50 Ω to ■ 39% CDMA/WCDMA efficiency at +28 dBm average output minimize the use of external components and features a low- power power mode to reduce standby current and DC power con- ■ 52% AMPS mode efficiency at +31 dBm output power sumption during peak phone usage. High power-added effi- ■ Compact lead-free compliant LCC package ciency and excellent linearity are achieved using Fairchild RF’s (3.0 X 3.0 x 1.0 mm) InGaP Heterojunction Bipolar Transistor (HBT) process. ■ Internally matched to 50 ohms and DC blocked RF input/output ■ Meets CDMA2000-1XRTT/WCDMA performance require- ments ■ Alternative pin-out to Fairchild RMPA0965 Device Functional Block Diagram (Top View) MMIC 1 8 GND Vref DC Bias Control Output Vmode 2 7 RF OUT Match Input RF IN 3 6 GND Match Vcc1 4 5 Vcc2 (paddle ground on package bottom) ©2005 1 RMPA0967 Rev. C
