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RFG45N06
45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
A RFG45N06, RFP45N06, SEMICONDUCT OR RF1S45N06, RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel December 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 • 45A, 60V SOURCE = 0.028Ω •r DRAIN DS(ON) GATE Temperature Compensating PSPICE Model • DRAIN (BOTTOM • Peak Current vs Pulse Width Curve SIDE METAL) • UIS Rating Curve o C Operating Temperature • +175 Description The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the JEDEC TO-220AB MegaFET process. This process, which uses feature sizes SOURCE approaching those of LSI integrated circuits gives optimum DRAIN GATE utilization of silicon, resulting in outstanding performance. DRAIN (FLANGE) They were designed for use in applications such as switch- ing regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND JEDEC TO-262AA RFG45N06 TO-247 RFG45N06 SOURCE DRAIN RFP45N06 TO-220AB RFP45N06 GATE DRAIN (FLANGE) RF1S45N06 TO-262AA F1S45N06 RF1S45N06SM TO-263AB F1S45N06 NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e.RF1S45N06SM9A. Formerly developmental type TA49028. JEDEC TO-263AB MA D Symbol DRAIN (FLANGE) GATE G SOURCE S o Absolute Maximum Ratings T = +25 C C RFG45N06, RFP45N06 RF1S45N06, RF1S45N06SM UNITS Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 60 V DSS Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 60 V DGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V ±20 V GS Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I 45 A D Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I Refer to Peak Current Curve DM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E Refer to UIS Curve AS Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I 125 A AM Power Dissipation o T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 131 W C D o o Derate above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 0.877 W/ C T o Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to +175 C STG J CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. File Number 3574.2 Copyright © Harris Corporation 1995 3-33 A
