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RFD10P03HARRISN/a763avai10A/ 30V/ 0.200W/ Logic Level P-Channel Power MOSFET


RFD10P03 ,10A/ 30V/ 0.200W/ Logic Level P-Channel Power MOSFETFeatures Description• 10A, 30V These products are P-Channel power MOSFETs manufac-tured using the M ..
RFD10P03L ,10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFETFeaturesP-Channel Power MOSFET• 10A, 30VThese products are P-Channel power MOSFETs = 0.200Ω•rDS(ON) ..
RFD10P03LSM ,10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFETRFD10P03L, RFD10P03LSM, RFP10P03LData Sheet July 1999 File Number 3515.210A, 30V, 0.200 Ohm, Logic ..
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RFD10P03
10A/ 30V/ 0.200W/ Logic Level P-Channel Power MOSFET
RFD10P03L, RFD10P03LSM, SEMICONDUCT OR RFP10P03L 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac- tured using the MegaFET process. This process, which uses = 0.200Ω •r DS(ON) feature sizes approaching those of LSI circuits, gives opti- mum utilization of silicon, resulting in outstanding perfor- Temperature Compensating PSPICE Model • mance. They were designed for use in applications such as • PSPICE Thermal Model switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly • Peak Current vs Pulse Width Curve from integrated circuits. • UIS Rating Curve o C Operating Temperature • 175 Symbol Ordering Information D PART NUMBER PACKAGE BRAND RFD10P03L TO-251AA 10P03L G RFD10P03LSM TO-252AA 10P03L RFP10P03L TO-220AB F10P03L S NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A.. Formerly developmental type TA49205. Packaging JEDEC TO-220AB JEDEC TO-251AA SOURCE DRAIN SOURCE GATE DRAIN DRAIN (FLANGE) DRAIN (FLANGE) GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 3515.1 Copyright © Harris Corporation 1997 1
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