| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| REG113NA-2.85/3KG4 |
TI|Texas Instruments |
N/a |
12000 |
 |
|
REG113NA-3.3/250 ,DMOS 400mA Low-Dropout RegulatorREG113SBVS031D – MARCH 2001 – REVISED SEPTEMBER 2005DMOS400mA Low-Dropout RegulatorDESCRIPTION
REG113NA-3.3/3K ,25TYPICAL CHARACTERISTICSFor all models, at T = +25°C and V = 1.8V, unless otherwise noted.J ENABLEOU ..
REG113NA-3/250 ,DMOS 400mA Low-Dropout RegulatorFEATURESThe REG113 is a family of low-noise, low-dropout linear* CAP-FREE DMOS TOPOLOGY:regulators ..
REG113NA-3/250G4 ,400mA, Low-Noise, Low-Dropout Regulator 5-SOT-23 -40 to 85FEATURESThe REG113 is a family of low-noise, low-dropout linear* CAP-FREE DMOS TOPOLOGY:regulators ..
REG113NA-3/3K ,DMOS 400mA Low-Dropout RegulatorMAXIMUM RATINGSELECTROSTATICSupply Input Voltage, V . –0.3V to 12VINDISCHARGE SENSITIVITYEnable Inp ..
RN2905FE ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Inc ..
RN2906 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2901,RN2902,RN2903,RN2 ..
RN2906FS ,Bias resistor built-in transistor (BRT), 2-in-1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent CircuitCharacteristics Symbol Rati ..
