| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| REG113NA-2.5/2K5 |
TI|Texas Instruments |
N/a |
5600 |
 |
|
REG113NA-2.5/3K ,DMOS 400mA Low-Dropout RegulatorREG113SBVS031D – MARCH 2001 – REVISED SEPTEMBER 2005DMOS400mA Low-Dropout RegulatorDESCRIPTION
REG113NA-2.85/250 ,DMOS 400mA Low-Dropout Regulator(1)ABSOLUTE
REG113NA-2.85/3K ,DMOS 400mA Low-Dropout RegulatorELECTRICAL CHARACTERISTICSBoldface limits apply over the specified temperature range, T = –40°C to ..
REG113NA-3.3/250 ,DMOS 400mA Low-Dropout RegulatorREG113SBVS031D – MARCH 2001 – REVISED SEPTEMBER 2005DMOS400mA Low-Dropout RegulatorDESCRIPTION
REG113NA-3.3/3K ,25TYPICAL CHARACTERISTICSFor all models, at T = +25°C and V = 1.8V, unless otherwise noted.J ENABLEOU ..
RN2903FE ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor buil ..
RN2904 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2901,RN2902,RN2903,RN2 ..
RN2905 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Unit in mm Including two devices in US6 (ultra super mini type with 6 leads) Wit ..
