| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| REG102NA-2.8/3KG4 |
TI|Texas Instruments |
N/a |
12000 |
 |
|
REG102NA-2.85/250 ,25ELECTRICAL CHARACTERISTICSBoldface limits apply over the specified temperature range, T = –40°C to ..
REG102NA-2.85/3K ,25MAXIMUM RATINGSELECTROSTATICSupply Input Voltage, V . –0.3V to 12VINDISCHARGE SENSITIVITYEnable Inp ..
REG102NA-3.3/250 ,25TYPICAL CHARACTERISTICSFor all models, at T = +25°C and V = 1.8V, unless otherwise noted.J ENABLEOU ..
REG102NA-3.3/250G4 ,250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23 -40 to 85.(2) Output voltages from 2.5V to 5.1V in 50mV increments are available; minimum order quantities a ..
REG102NA-3.3/3K ,25TYPICAL CHARACTERISTICSFor all models, at T = +25°C and V = 1.8V, unless otherwise noted.J ENABLEOU ..
RN2113FT ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Unit: mm High-density mount is possible because of devices housed in very thin T ..
RN2113MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― Characteristic Symbol Rating Unit TOSHIBA 2-1L ..
RN2114 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN2114RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114,RN2115,RN2116 RN ..
