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REF5050AIDR/SOIC-8/TI TI|Texas Instruments N/a 20



REF5050ID ,3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125Features list; added Excellent Long-Term Stability bullet ...... 1• Added Thermal Hysteresis parame ..
REF5050IDG4 ,3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125Electrical Characteristics table ....... 6• Changed third bullet in Layout Guidelines section .. 21 ..
REF5050IDR ,3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125Features section ....... 1• Changed MSOP to VSSOP and SO to SOIC throughout document ... 1• Added T ..
REF5050IDRG4 ,3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125 SBOS410H–JUNE 2007–REVISED JUNE 2016Changes from Revision E (June 2010) to Revision F Page• Change ..
REF50D , 5V MICROPOWER PRECISION REFERENCE
RN1911FS ,Bias resistor built-in transistor (BRT), 2-in-1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min T ..
RN1961FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor buil ..
RN1962 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias ..
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