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Home ›  RR7 > REF5025-REF5025AID-REF5025AIDGKR-REF5025AIDR-REF5025ID-REF5025IDG4,3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125
REF5025-REF5025AID-REF5025AIDGKR-REF5025AIDR-REF5025ID Fast Delivery,Good Price
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REF5025TI/BBN/a4avaiLow Noise, Very Low Drift, Precision Voltage Reference
REF5025AIDTIN/a2300avai3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125
REF5025AIDGKRTIN/a35avai3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-VSSOP -40 to 125
REF5025AIDRBBN/a3500avai3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125
REF5025IDTIN/a2500avai3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125
REF5025IDG4TEAXSN/a2399avai3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125


REF5025AIDR ,3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125features, combined with– Standard-Grade: 0.1% (Max)very low noise, make the REF50xx family ideal fo ..
REF5025ID ,3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125Features 3 DescriptionThe REF50xx is a family of low-noise, low-drift, very1• Low Temperature Drift ..
REF5025IDG4 ,3 ?Vpp/V Noise, 3 ppm/?C Drift Precision Voltage Reference 8-SOIC -40 to 125Electrical Characteristics 6• Changed Figure 22...... 10• Changed Figure 23...... 10• Changed Figur ..
REF5025SHKJ ,High Temperature Low Noise, Very Low Drift, Precision Voltage References 8-CFP -55 to 210features, combined with very low noise, make the(1)REF5025-HT suitable for use in high-precision da ..
REF5030 ,Low Noise, Very Low Drift, Precision VOLTAGE REFERENCEElectrical Characteristics 6• Changed Figure 22...... 10• Changed Figure 23...... 10• Changed Figur ..
REF5030AID ,Low Noise, Very Low Drift, Precision VOLTAGE REFERENCE 8-SOIC -40 to 125Electrical Characteristics table ....... 6• Changed third bullet in Layout Guidelines section .. 21 ..
RN1903FS ,Bias resistor built-in transistor (BRT), 2-in-1absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1904 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in US6 (ultra super mini type with 6 leads) With built-in ..
RN1904AFS ,Bias resistor built-in transistor (BRT), 2-in-1Applications 1.0±0.05 0.8± 0.05 0.1±0.050.1±0.05 • Two devices are incorporated into a fine-pitc ..
RN1904FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor buil ..
RN1904FS ,Bias resistor built-in transistor (BRT), 2-in-1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit (top view) Characteristic ..
RN1905 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1901,RN1902,RN1903 RN1 ..


REF5025-REF5025AID-REF5025AIDGKR-REF5025AIDR-REF5025ID-REF5025IDG4
Low Noise, Very Low Drift, Precision Voltage Reference
OPA365
ADS8326
REF5040

Input Signal,
0 V to 4 V
5 V
124 Ÿ
1 nF
VDD
GNDREF
VIN VOUT
GND
+5V C2
22 μF
5 V
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REF5010, REF5020, REF5025, REF5030
REF5040, REF5045, REF5050

SBOS410H–JUNE 2007–REVISED JUNE 2016
REF50xx
Low-Noise, Very Low Drift, Precision Voltage Reference Features
Low Temperature Drift: High-Grade:3 ppm/°C (Max) Standard-Grade:8 ppm/°C (Max) High Accuracy: High-Grade: 0.05% (Max) Standard-Grade: 0.1% (Max) Low Noise:3 μVPP/V Excellent Long-Term Stability: 45 ppm/1000hr (Typ) after 1000 Hours High-Output Current: ±10 mA Temperature Range: –40°Cto 125°C Applications Precision Data Acquisition Systems ATE Equipment Industrial Process Controls Medical Instrumentation Pressure and Temperature Transmitters Seismic monitoring systems Description
The REF50xxisa familyof low-noise, low-drift, very
high precision voltage references. These references
are capableof both sinking and sourcing current, and
have excellent line and load regulation.
Excellent temperature drift (3 ppm/°C) and high
accuracy (0.05%) are achieved using proprietary
design techniques. These features, combined with
very low noise, make the REF50xx family ideal for
usein high-precision data acquisition systems.
Each reference voltageis availablein both high grade
(REF50xxIDGK and REF50xxID) and standard grade
(REF50xxAIDGK and REF50xxAID). The reference
voltages are offered in 8-pin VSSOP and SOIC
packages, and are specified from –40°Cto 125°C.
Device Information(1)

(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
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