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Home ›  RR7 > REF3318AIDBZR-REF3318AIDBZT-REF3318AIDCKR-REF3318AIDCKT,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
REF3318AIDBZR-REF3318AIDBZT-REF3318AIDCKR-REF3318AIDCKT Fast Delivery,Good Price
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REF3318AIDBZRTIN/a218000avai30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
REF3318AIDBZTTIN/a250avai30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
REF3318AIDCKRTIN/a3000avai30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SC70 -40 to 125
REF3318AIDCKTTIN/a1696avai30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SC70 -40 to 125


REF3318AIDBZR ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125 SBOS392G–AUGUST 2007–REVISED DECEMBER 2016Changes from Revision B (February 2014) to Revision C Pa ..
REF3318AIDBZT ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125Features 3 DescriptionThe REF33xx is a low-power, precision, low-dropout1• Microsize Packages: SC70 ..
REF3318AIDCKR ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SC70 -40 to 125Electrical Characteristics table ..... 6• Changed minimum supply voltage value in Device Functional ..
REF3318AIDCKT ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SC70 -40 to 125Electrical Characteristics....... 613.3 Receiving Notification of Documentation Updates 207.6 Typic ..
REF3320AIDBZR ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125Features 3 DescriptionThe REF33xx is a low-power, precision, low-dropout1• Microsize Packages: SC70 ..
REF3320AIDBZT ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125 SBOS392G–AUGUST 2007–REVISED DECEMBER 2016Changes from Revision B (February 2014) to Revision C Pa ..
RN1602 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1 ..
RN1603 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1 ..
RN1604 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1 ..
RN1605 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1 ..
RN1606 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in SM6 (super mini type with 6 leads) With built-in bias r ..
RN1607 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1607~RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607,RN1608,RN1609 Un ..


REF3318AIDBZR-REF3318AIDBZT-REF3318AIDCKR-REF3318AIDCKT
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
Sample & Support & Product Tools & Technical Community Buy Folder Documents Software REF3312, REF3318, REF3320, REF3325, REF3330, REF3333 SBOS392G – AUGUST 2007 – REVISED DECEMBER 2016 REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference 1 Features 3 Description The REF33xx is a low-power, precision, low-dropout 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 voltage reference family available in tiny SC70-3 and • Low Supply Current: 3.9μA (typ) SOT-23-3 packages, and in a 1.5-mm × 1.5-mm • Extremely Low Dropout Voltage: 110 mV (typ) UQFN-8 package. Small size and low power consumption (5-μA max) make the REF33xx ideal for • High Output Current: ±5 mA a wide variety of portable and battery-powered • Low Temperature Drift: 30 ppm/°C (max) applications. • High Initial Accuracy: ±0.15% (max) The REF33xx can be operated at a supply voltage • 0.1-Hz to 10-Hz Noise: 35μV (REF3312) PP 180 mV above the specified output voltage under • Voltage Options: 1.2 V, 1.8 V, 2.5 V, 3 V, 3.3 V normal load conditions, with the exception of the REF3312, which has a minimum supply voltage of 2 Applications 1.7 V. All models are specified for the wide temperature range of –40°C to +125°C. • Portable Equipment (1) • Tablets and Smartphones Device Information • Hard Disk Drives PART NUMBER PACKAGE BODY SIZE (NOM) • Sensor Modules SOT-23 (3) 2.92 mm × 1.30 mm • Data Acquisition Systems REF33xx SC70 (3) 2.00 mm × 1.25 mm UQFN (8) 1.50 mm × 1.50 mm • Medical Equipment • Test Equipment (1) For all available packages, see the package option addendum at the end of the datasheet. REF3312 in a Single-Supply Signal Chain Dropout Voltage vs Load Current +2.7V 200 R R 3 2 180 V CC 160 +2.7V MSP430x20x3PW +125°C P1.2 140 (1) R 1 Enable 66.5W 120 A0+ 16-Bit ADC C V 1 100 IN 1.5nF 80 REF3312 VREF 60 OPA333, C V SS +25°C 2 OPA363, 1mF 40 or -40°C OPA369 20 0 -5 -4 -3 -2 -1 0 1 2 3 4 5 Load Current (mA) 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. Dropout Voltage (mV)
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