OP292GP ,DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIERCHARACTERISTICS
Output Voltage Swing Vo RL = 2 kn to GND tll t 12.2 V
--40T 5 TA 5 + 125°C t10 tl ..
OP292GP ,DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIERCHARACTERISTICS
Offset Voltage VOS
OP292 1.0 2.0 mV
-400C 5 TA S +85°C 1.2 2.5 mV
-4()0C 3 TA 5 ..
OP292GP ,DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIERCHARACTERISTICS
Offset Voltage Vos
OP292 0.1 0.8 mV
740°C S TA S +85°C 0.3 1.2 mV
740°C S TA S ..
OP292GS ,DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIERCHARACTERISTICS
Output Voltage Swing
High VOUT RL = 100 kn to GND
740°C 3 TA S +125°C 4.0 4.3 V
..
OP293ES ,Precision, Micropower Operational AmplifiersGENERAL DESCRIPTIONV+OUT A 1 8OP293–IN A OUT BThe OP193 family of single-supply operational amplifi ..
OP293ES-REEL ,Precision, Micropower Operational AmplifiersCHARACTERISTICSOutput Voltage Swing High V I = 1 mA +14.1 14.2 +14.1 14.2 VOH LI = 1 mA,L–40°C ≤ T ..
P3LP-155L , Low Pass LC Filter Modules
P3NB60FP , N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
P401 ,400V 40A 2 SCR Traverse Bridge in a PACE-Pak packageApplications include power supplies, control cir-cuits and battery chargers.Major Ratings and Chara ..
P402 ,600V 40A 2 SCR Traverse Bridge in a PACE-Pak packageBulletin I2776 rev. E 04/99P400 SERIESPASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P403 ,800V 40A 2 SCR Traverse Bridge in a PACE-Pak packageApplications include power supplies, control cir-cuits and battery chargers.Major Ratings and Chara ..
P40-G240-WH , P40-G Series TBU® High-Speed Protectors
OP292GP-OP492GS
DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIER
ANALOG
DEVICES
DuaI/(luatl Single Supply
Operational Amplifier
0P292/0P492
FEATURES
Single Supply Operation: 4.5 V to 33 V
Input Common Mode Includes Ground
Output Swings to Ground
High Slew Rate: 3 V/rss
High Gain Bandwidth: 4 MHz
Low Input Offset Voltage
High Open-Loop Gain
No Phase Inversion
Low Cost
APPLICATIONS
Disk Drives
Mobile Phones
Servo Controls
Modems and Fax Machines
Pagers
Power Supply Monitors and Controls
Battery Operated Instrumentation
GENERAL DESCRIPTION
The OP292/OP492 are low cost general purpose dual and quad
operational amplifiers designed for single supply applications
and are ideal for +5 volt systems.
Fabricated on Analog Devices' CBCMOS process, the OP292/
OP492 series has a PNP input stage that allows the input volt-
age range to include ground. A BiCMOS output stage enables
the output to swing to ground while sinking current.
The OP292/OP492 series is unity-gain stable and features an
outstanding combination of speed and performance for single
or dual supply operation. The OP292/OP492 provide high slew
rate, high bandwidth, with open-loop gain exceeding 40,000 and
offset voltage under 800 p.V (OP292) and 1 mV (0P492). With
these combinations of features and low supply current, the
OP292/OP492 series is an excellent choice for battery operated
applications.
The OP292/OP492 series performance is specified for single or
dual supply voltage operation over the extended industrial tem-
perature range (-4()OC to +125°C).
Package options for the OP292 and OP492 include plastic DIP,
SO-8 (OP292) and SO-14.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices forits
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
8-Lead Narrow-Body SO
PIN CONNECTIONS
8-Lead Epoxy DIP
(S Suffix) (P Suffix)
' -N-/--
E 0 El OUTA d OP292 El ov
F: 0P292 g -INA [i-a/iii-l-is T cum
E E] +INA E (fre:'-", -INB
-v E E] +INB
l4-Lead Narrow-Body SO
l4-Lead Epoxy DIP
(S Suffix) (P Suffix)
l: q E] OUTA [E E OUTD
E 'iii] "NA [tPiet-is érEI-m”
E 0P492 E +INA [E E +IND
IE El +V E OP492 E] -V
[E E +INB E E +INC
-INB rt-ri) v3 MNC
OUTB E E WW
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
tPal/tPal-SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ lls = +5 ll, v... = (Ill, v0 = +2 ll, T, = +25T unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage Vos
OP292 0.1 0.8 mV
740°C S T, S +85°C 0.3 1.2 mV
740°C S TA S +125°C 0.5 2.5 mV
OP492 Vos 0.1 1 mV
-40''C S TA Ef, +85°C 0.3 1.5 mV
-400C S T, "Ca' +125°C 0.5 2.5 mV
Input Bias Current IR 450 700 nA
-40'C S T, S +85°C 0.75 2.5 wA
740°C "-C-c TA S +125°C 3.0 5.0 WA
Input Offset Current los, 7 50 nA
740°C S TA S +85°C 100 700 nA
-400C 5 TA 5 +125°c 0.4 1.2 HA
Input Voltage Range 0 4.0 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.0 V 75 95 dB
-4()OC tC, TA 3 +85°C 70 93 dB
740°C S TA S +125°C 65 90 dB
Large Signal Voltage Gain Avo ltr, = 10 kn, Vo = 0.1 V to 4 V 25 200 V/mV
740°C < TA < +85°C 10 100 V/mV
740°C S T, S +125°C 5 50 V/mV
Offset Voltage Drift AVos/AT 740°C S TA S +125°C 2 10 WV/T
Long Term Vos Drift AVos/At Note 1 1 WV/Month
Bias Current Drift AIB/AT -4(Y'C S TA S +85°C 6 pA/°C
740°C S TA S +125°C 400 pA/°C
Offset Current Drift AIOS/AT 740°C S TA S +85°C 1.5 pA/°C
-4(y'C S TA S +125°C 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing
High VOU-r RL = 100 kfl to GND
740°C S T, S +125°C 4.0 4.3 V
RL = 2 kn to GND 3.8 4.1 V
740°C S T, S +125°C 3.7 3.9 V
Low VOUT RL = 100 k0 to V+ 8 20 mV
740°C IC, TA Ea' +125°C 12 20 mV
Rr. = 2 lul to V+ 280 450 mV
-4(y'C S T, S +125°C 300 550 mV
Short Circuit Current Limit Ist: 5 8 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 4.5 V to +30 V, Vo = 2 V 75 95 dB
740°C S TA S +125°C 70 90 dB
Supply Current Per Amp Iss, V0 = 2 V
OP292, OP492 0.8 1.2 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kfl 3 V/ws
-4()aC S T, S +125°C l 2 V/p.s
Gain Bandwidth Product GBP 4 MHz
Phase Margin rbm 75 Degrees
Channel Separation CS f0 = 1 kHz 100 dB
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 25 WV p-p_
Voltage Noise Density en f = 1 kHz 15 nV/Nnl_re
Current Noise Density in 0.7 pA/\/Hz
tong term offset voltage drift is guaranteed by 1000 hours life test performed on three independent wafer lots at ~125°C with LTPD of 1.3.
Specifications subject to change without notice.
REV. 0
ELECTRICAL CHARACTERISTICS (@ VS = :15 ll, T, = +25°C unless otherwise noted)
0P292/0P492
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage Vos
OP292 1.0 2.0 mV
40°C < T, S +85°C 1.2 2.5 mV
-4(Y'C S TA 3 +125°C 1.5 3 mV
OP492 1.4 2.5 mV
- 40°C 5 TA 5 +85°C 1.7 2.8 mV
-4fy'C S TA S +125°C 2 3 mV
Input Bias Current lr, 375 700 nA
-4(Y'C 3 TA 2’ +125°C 0.5 1 WA
Input Offset Current los 7 50 nA
-4(YC 52 TA : +85°C 20 100 nA
-40''C "c_cL' TA S +125°C 0.4 1.2 WA
Input Voltage Range Note 1 -ll 11 V
Common-Mode Rejection Ratio CMRR VCM - :11 V 78 100 dB
-400C suCC TA : +125°C 75 95 dB
Large Signal Voltage Gain Avo RL = 10 k0, Vo = :10 V 25 120 V/mV
--4YC S TA 5 +853C 10 75 V/mV
--4(y'C 5 T, S +125°C 5 60 V/mV
Offset Voltage Drift AVOS/AT -4(Y'C 5 TA S +125°C 4 10 wV/T
Bias Current Drift AIB/AT -4(Y'C 5 TA S +125°C 3 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing Vo RL = 2 kil to GND tll :12.2 V
-40oC 5 TA :1 +125°C :10 tll V
RL = 100 kn to GND :13.8 -'-14.3 V
-40t 5 TA S +125°C t13.5 :14.0 mV
Short Circuit Current Limit Isc. Short Circuit to GND 8 10.5 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = +2.25 V to :15 V 75 86 dB
-40oC S T, : +125°C 70 83 dB
Supply Current Per Amp Isy Vo = 0 V
OP292, C)P492 1 1.4 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL =10 kn 2.5 4 V/ws
-4(FC 3 TA 5 +125°C 2 3 Wm
Gain Bandwidth Product GBP 4 MHz
Phase Margin (hm 75 Degrees
Channel Separation CS fo = 1 kHz 100 dB
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 25 p.V p-p
Voltage Noise Density n f = 1 kHz 15 nV/ym
Current Noise Density 1n 0.7 pA/V'm
lInput voltage range is guaranteed by CMRR tests.
Specifications subject to change without notice.
REV. O -3-
0P292/0P492
WAFER TEST LIMITS (0 lls = +5.0 ll, VCM = 2.5 ll, T, = +25% unless otherwise noted)
Parameter Symbol Conditions Limit Units
Offset V oltage Vos t600 p.V max
Input Bias Current IB 700 nA max
Input Offset Current los 50 nA max
Input Voltage Range1 VCM 0/4 V min/V max
Common-Mode Rejection CMRR VCM = 0 V to 4.0 V 75 dB min
Power Supply Rejection Ratio PSRR V = t4.5 V to :15 V 75 dB min
Large Signal Voltage Gain Avo RL = 10 kfl, V0 = 0.1 V to 4 V 25 V/mV min
Output Voltage Vo RI, 2 kfl 3.8 V min
Supply Current per Amp OP292, OP492 ISY Vo = 0 V, RL = Open 1.2 mA max
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for
standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
1Guaranteed by CMR test.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage ........................... +33 V
Input Voltage2 ..................... - 15 V to + 14 V
Differential Input Voltage2 ...................... V
Output Short-Circuit Duration ............ UNLIMITED
Storage Temperature Range
P, S Package ....................
Operating Temperature Range
OP292/OP492 P, S ................
Junction Temperature Range
P, S Package ....................
- 65°C to + 150°C
-40oC, to +125°C
-65'C to +125°C
Lead Temperature Range (Soldering, 60 sec) ....... +300°C
Package Type 01,8 0sc Units
8-Pin Plastic DIP (P) 103 43 °C/W
14-Pin Plastic DIP (P) 83 39 'C/W
8-Pin SO (8) 158 43 "C/W
14-Pin SO (S) 120 36 "C/W
'Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2For supply voltages less than +36 V, the absolute maximum input voltage is
equal to the supply voltage.
'or, is specified for the worst case conditions, Le., or, is spec'fed for device in
socket for P-DIP package; 6” is specified for device soldered in circuit board
for SOIC package.
ORDERING GUIDE
Model I Temperature Range Package Option
OP292GP -40oC to --125T . N-8
OP292GS -40oC to TIZSOC SO-8
OP492GP -4(Y'C to +125°C N-14
OP492GS -400C to +125°C SO-14
OP292/492GBC +25°C DICE
DICE CHARACTERISTICS
5 OINB
OP292 Die Size 0.040 8 0.057 Inch, 2,280 Sq. Mils
Substrate Connected to V+, Number of Transistors:
Bipolar 47, MOSFET 5.
-INA OUTA
OUTD -IND
2 1 14 13
+INA 3 12 +IND
.v 4 -
+INB 5 - IO +INC
-IN B O UTB
OP492 Die Size 0.057 8 0.068 Inch, 3,876 Sq. Mils
Substrate Connected to V+, Number of Transistors:
Bipolar 91, MOSFET 9.
REV, 0
0P292/0P492
Vs = +5V
175 VCM = ov
T, = +25°C
150 720 OP AMPS
-500 -A00 -300 -200 -100 0 100 200 300 400 500
INPUT OFFSET VOLTAGE, Vos - “V
Figure 1. 0P292 Input Offset Voltage Distribution (r) +5 V
VS = :15V
280 vo, = ov
r, = +251:
2t10 720 OP AMPS
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFFSET VOLTAGE, Vos - mV
Figure 2. 0P292 Input Offset Voltage Distribution
(/t t15 V
Vs = +5V
vo, = 0V
40°C s; TA s125"C
600 OP AMPS
0 0.4 0.8 1.2 t.6 2.0 2.4 2.8 3.2 3.6 4.0
TCVOS - vuW"" C
Figure 3. 0P292 Temperature Drift (TCVOS) Distribution
((1/5V
REV. 0
Vs = r51f
140 VCM = 0V
TA = +25°C
120 600 OP AMPS
-0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
INPUT OFFSET VOLTAGE, Vos - mV
Figure 4, OP492 Input Offset Voltage Distribution (u’ +5 V
vs = :15v
vo, = ov
T, = +2s°c
600 OP-AMPS
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFFSET VOLTAGE, Vos - mV
Figure 5, OP492 Input Offset Voltage Distribution
(rr t 15 V
Its = o5V
Ito, ' 0V
-40cC s TA s +1250C
600 OP AMPS
o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TCVos - “w‘ c
ure 6. OP492 Temperature Drift (TCVos) Distribution
(r +5 V
0P292/0P492
Vs = +5V
210 vo, = ov
-pot s TA s +125“c
180 600 OP AMPS
o 1 2 3 4 5 6 7 a
TCVos - (i/ot)
Figure 7. OP292 Temperature Drift (TCVos) Distribution (u
: 15 V
Vs = r5V
500 Vo = +4v -
< N, N,
a 300 x tss,
3 "st:::
i'', 200 Its,
g "ss. <1. =10k
"'"sss.,
h = 2k "s--.,
-50 -25 o 25 so 75 100 125
TEMPERATURE - 0C
Figure 8. OP292 Open-Loop Gain vs. Temperature (r +5 V
Vs = :15V
Vo = :10v
Q 150 "ss, a 10k
t "s,. 'se' L
3. 100 "s, "ss,
tL '''''"ssss, "ss-cs.:
O h = 2k \\ 'ss,,,
50 's,
-50 -25 O 25 50 75 100 1 25
TEMPERATURE - 'C
Figure 9. OP292 Open-Loop Gain vs. Temperature
(rt 1' 15 V
VS = 115V
ch = ov
-40'C s TA s +125°c
600 OP AMPS
0 1 2 3 4 5 6 7 8
TCVos - pIV/ac
Figure 10. 0P492 Temperature Drift (TCVos} Distribution
(1 i 15 V
OPEN-LOOP GAIN — V/mV
-50 -25 o 25 50 75 100 125
TEMPERATURE - "C
Figure 11. 0P492 Open-Loop Gain vs. Temperature
fir +5 V
OPEN-LOOP GAIN — V/mV
-50 -25 0 25 50 75 100 125
TEMPERATURE - "C
Figure 12. 0P492 Open-Loop Gain vs. Temperature
(d ct- 15 V
REV. 0
0P292/0P492
, 1 2 Vs = r15V
E 1.0 ---"
f, " w--------;
t 0.8 -,..----'" Vs = +5v
k' .,--'"
-50 -25 o 25 50 75 100 1 25
TEMPERATURE - uC
Figure 13. OP292 Supply Current per Amplifier
vs. Temperature
Vs = 45v
Vo = :1ov
SLEW RATE — Vms
-50 -25 0 25 50 75 100 125
TEMPERATURE - ''C
Figure M. OP292 Slew-Rate vs. Temperature
GAIN — dB
1k 10k 100k 1M 10M
FREQUENCY - Hz
Figure 15. 0P292/0P492 Open-hoop Gain and Phase
vs. Frequency ty +5 V
REV. 0
PHASE — Degrees
1.0 vs =s15V
0.4 Vs = +5V
SUPPLY CURRENT PER AMPLIFIER — mA
-50 -25 0 25 50 75 100 125
TEMPERATURE - CC
Figure 16. OP492 Supply Current per Amplifier
vs. Temperature
VS = s15V
Vo-- -1ov
SLEW RATE — V/us
-50 -25 0 25 50 75 100 125
TEMPERATURE - 'C
Figure 17. OP492 Slew-Rate vs. Temperature
GAIN -— dB
PHASE — Deg rees
1k 10k 100k 1M 10M
FREQUENCY - Hz
Figure 18. OP292/OP492 Open-Loop Gain/Phase vs.
Frequency (u :15 V
0P292/0P492
50 I I T] 60 1 l l
TA = 25'C r, = 25-"c
40 [ll : :3 w 40 Vs = s15V --
e. Is, =2
El 30 , .sle so
g 'N, g
t, 20 N. t 20 N,
3 W\ p, 'ste:
a "ss, a Is,
g 10 8 1o .
O , 0 \
-10 -to
tk 10k 100k 1M 10M 1k 10k 100k 1M 10M
FREQUENCY - Hz FREQUENCY - Hz
Figure 19. OP292/OP492 Closed-Loop Gain/Phase vs. Figure 22. OP292/OP492 Closed-Loop Gain/Phase vs.
Frequency (1] +5 V Frequency (r i15 V
120 1 fl 120 l l T
T, =25 C Ta = 25"c
aawo wfsv - ttt100 Vs=z15V -
u "ts, V‘ - 0V '0 ""s,,
I "s, g ss.
b' K Q ""ssss
tr, 80 's, t, 80 ~
'-# N l-'
u: 60 u 60
5 40 g 40 h
o 20 o 20
100 1k 10k 100k 1M 100 1k 10k 100k 1M
FREQUENCY - Hz FREQUENCY - Hz
Figure 20. OP292/0P492 CMR vs. Frequency ((7 +5 V Figure 23. OP292/OP492 CMR vs. Frequency ((2 t 15 V
120 120 I JO"
_ l I l I TA =25t
m 100 TA=+25 c m 100 vs=z1svi_
, VS = +5 , r.-....)
c5, 80 b's 80 \5x
0 U N, "s,
5 WM. h' \\ \wsnn
, 60 , so "ss, . 'iss
g "ss; t -PSRR ")ssl "ss,
a 40 - il "s
u: _ u: 40 "s., 's,
tk 20 l 20
100 1k 10k 100k 1M owo 1k 10k 100k 1M
FREQUENCY - Hz FREQUENCY - Hz
Figure 21. OP292/OP492 PSR vs. Frequency Ce' +5 v Figure 24. OP292/OP492 PSR vs. Frequency (e) r 15 v
-8- REV. O
0P292/0P492
Vs = 45v
75 4.6
e', Ru = 100k
E IL...------"
Ill ------"
o -----"'CL..----"
t, -..----tC..'.CL---'- RL=10k
o 4.2 I
' .---'' _---------.,
's -.----" Crs,
E w.,,.,,,,,.------""
a 4.0 Ru = 2k
-50 -25 O 25 50 75 100 125
TEMPERATURE - ('C
Figure 25. OP292/OP492 VOUT Swing vs. Temperature
It +5 V
INPUT BIAS CURRENT — 11A
TEMPERATURE - 'C
75 100 125
Figure 26. 0P292/OP492 Input Bias Current vs. Tempera-
ture (a +5 V
FREQUENCY - Hz
1k 10k 100k
Figure 27. OP292/OP492 Channel Separation
REV. 0
—0UTPUT SWING —
+OUTPUT SWING — Volts
Ru=10k
TEMPERATURE - "C
Figure 28. OP292/OP492 VOUT Swing vs. Temperature
fy : 15 V
75 100 125
"ss, Vs = s15V
500 _, VCM=0V -
< 's,, 's,,
I: "s, "s,
's 400 _
ug "s,,. OP492
Ei OP ssssssss
's 200 292 _
-50 -25 o 25 50 75 100 125
TEMPERATURE - "C
Figure 29. OP292/OP492 Input Bias Current vs. Tempera-
ture f :15 V
0.48 -
0.46 -
0.44 -
0.42 -
0.40 -
0.38 -
0.30 - F
0.34 - 3.
0.32 -
0.30 _ o
0.20 -
0.26 -
0.24 _
0.22 _
0.20 -
0.18 l I l l I l 1 I I l l l l I
012 3 4 5 e 7 a 9101112131415
Figure 30.
Voltage
0P292/OP492 l,5 Current vs. Common Mode
