OP227 ,Dual, Low-Noise Low-Offset Instrumentation Operational AmplifierCharacteristics (V = 15 V, T = 25C, unless otherwise noted.)S AOP227E OP227GParameter Symbol Cond ..
OP227AY ,DUAL, LOW-NOISE LOW OFFSET INSTRUMENTATION OPERATIONAL AMPLIFIERspecifications are realized through the
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OP227AY ,DUAL, LOW-NOISE LOW OFFSET INSTRUMENTATION OPERATIONAL AMPLIFIERCHARACTERISTICS at Vs = i15V, TA = 25°C, unless otherwise noted.
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OP227EY ,Dual, Low-Noise Low-Offset Instrumentation Operational AmplifierCharacteristics (V = 15 V, T = 25C, unless otherwise noted.)S AOP227E OP227GParameter Symbol Cond ..
OP227GY ,Dual, Low Noise, Low Offset Instrumentation Operational Amplifiercharacteristics, coupled with a slew rate of 2.8 V/msamplifiers. DC stability is assured by a long- ..
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OP227
Dual, Low-Noise Low-Offset Instrumentation Operational Amplifier
REV.A
Dual, Low Noise, Low Offset
Instrumentation Operational Amplifier
PIN CONNECTIONS
FEATURES
Excellent Individual Amplifier Parameters
Low VOS, 80 �V Max
Offset Voltage Match, 80 �V Max
Offset Voltage Match vs. Temperature, 1 �V/�C Max
Stable VOS vs. Time, 1 �V/MO Max
Low Voltage Noise, 3.9 nV/÷Hz Max
Fast, 2.8 V/�s Typ
High Gain, 1.8 Million Typ
High Channel Separation, 154 dB Typ
GENERAL DESCRIPTIONThe OP227 is the first dual amplifier to offer a combination of
low offset, low noise, high speed, and guaranteed amplifier matching
characteristics in one device. The OP227, with a VOS match of
25 mV typical, a TCVOS match of 0.3 mV/∞C typical and a 1/f corner
of only 2.7 Hz is an excellent choice for precision low noise designs.
These dc characteristics, coupled with a slew rate of 2.8 V/ms
typical and a small-signal bandwidth of 8 MHz typical, allow the
designer to achieve ac performance previously unattainable with
op amp based instrumentation designs.
When used in a three op amp instrumentation configuration, the
OP227 can achieve a CMRR in excess of 100 dB at 10 kHz. In
addition, this device has an open-loop gain of 1.5 M typical with
a 1 kW load. The OP227 also features an IB of ±10 nA typical,
an IOS of 7 nA typical, and guaranteed matching of input currents
SIMPLIFIED SCHEMATICbetween amplifiers. These outstanding input current specifications
are realized through the use of a unique input current cancellation
circuit which typically holds IB and IOS to ±20 nA and 15 nA
respectively over the full military temperature range.
Other sources of input referred errors, such as PSRR and CMRR,
are reduced by factors in excess of 120 dB for the individual
amplifiers. DC stability is assured by a long-term drift application
of 1.0 mV/month.
Matching between channels is provided on all critical param-
eters including offset voltage, tracking of offset voltage versus
temperature, noninverting bias current, CMRR, and power
supply rejection ratio. This unique dual amplifier allows the
elimination of external components for offset nulling and
frequency compensation.
OP227–SPECIFICATIONS
Individual Amplifier Characteristics (VS = �15 V, TA = 25�C, unless otherwise noted.)INPUT NOISE VOLTAGE
POWER SUPPLY
OFFSET ADJUSTMENT
NOTESInput offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. E Grade specifications are
guaranteed fully warmed up.Long term input offset voltage stability refers to the average trend line of VOS vs. time over extended periods after the first 30 days of operation. Excluding the initial
hour of operation, changes in VOS during the first 30 days are typically 2.5 mV. Refer to the Typical Performance Curve.Sample tested.Parameter is guaranteed by design.See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester.See test circuit for current noise measurement.Guaranteed by input bias current.
Specifications subject to change without notice.
OP227
SPECIFICATIONS
Individual Amplifier Characteristics (VS = �15 V, –25�C £ TA £ +85�C, unless otherwise noted.)INPUT OFFSET
CURRENT
INPUT BIAS
CURRENT
LARGE-SIGNAL
VOLTAGE GAIN
Matching Characteristics (VS = ±15 V, TA = 25�C, unless otherwise noted.)NOTES
1Input Offset Voltage measurements are performed by automated equipment approximately 0.5 seconds after application of power.
2The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kW to 20 kW, optimum performance is obtained with RP = 8 kW.
3Sample tested.
OP227–SPECIFICATIONS
Matching Characteristics (VS = �15 V, TA = -25�C to +85�C, unless otherwise noted.)NONINVERTING
OFFSET CURRENT
INVERTING OFFSET
CURRENT
NOTES
*Sample tested.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGSSupply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V
Input Voltage1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V
Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ±0.7 V
Differential Input Current2 . . . . . . . . . . . . . . . . . . . . . ±25 mA
Storage Temperature Range . . . . . . . . . . . . . –65∞C to +150∞C
Operating Temperature Range
OP227E, OP227G . . . . . . . . . . . . . . . . . . . . –25∞C to +85∞C
Lead Temperature (Soldering 60 sec) . . . . . . . . . . . . . . 300∞C
NOTES
1For supply voltages less than ±22 V, the absolute maximum input voltage is equal
to the supply voltage.
2The OP227 inputs are protected by back-to-back diodes. Current limiting resistors
are not used in order to achieve low noise. If differential input voltage exceeds ±0.7
V, the input current should be limited to 25 mA.
3�JA is specified for worst-case mounting conditions, i.e., �JA is specified for device
in socket for CERDIP package.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP227 features propriety ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefor, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
THERMAL CHARACTERISTICS
Thermal Resistance14-Lead CERDIP
�JA3 = 106∞C/W
�JC = 16∞C/W
For military processed devices, please refer to the Standard
Microcircuit Drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp.
*Not recommended for new design, obsolete April 2002.
OP227TPC 3.Voltage Noise Density vs.
Frequency
TPC 6.Total Noise vs. Source
Resistance
TPC 4.Comparison of Op Amp Voltage
Noise Spectra
TPC 7.Voltage Noise Density vs.
Temperature
TPC 5.Input Wideband Noise vs. Band-
width (0.1 Hz to Frequency Indicated)
TPC 8.Current Noise Density vs.
Frequency
TPC 2.Low Frequency Noise
(Observation Must Be Limited to 10
Seconds to Ensure 0.1 Hz Cutoff)
TPC 1.Voltage Noise Test Circuit
(0.1 Hz to 10 Hz p-p)
–Typical Performance Characteristics
TPC 9.Supply Current vs. Supply
Voltage
TPC 12.Warm-Up Drift
TPC 15.Input Offset Current vs.
Temperature
TPC 10.Offset Voltage Drift of
Representative Units
TPC 13.Offset Voltage Change Due to
Thermal Shock
TPC 16.Open-Loop Gain vs. Frequency
TPC 11.Offset Voltage Stability
with Time
TPC 14.Input Bias Current vs.
Temperature
TPC 17.Slew Rate, Gain Bandwidth
Product, Phase Margin vs. Temperature
OP227TPC 18.Gain, Phase Shift vs.
Frequency
TPC 21.Maximum Undistorted Output
vs. Frequency
TPC 24.Small-Signal Transient
Response
TPC 19.Open-Loop Gain vs. Supply
Voltage
TPC 22.Small-Signal Overshoot vs.
Capacitive Load
TPC 25.Large-Signal Transient
Response
TPC 20.Output Swing vs. Resistive
Load
TPC 23.Short-Circuit Current vs. Time
TPC 26.Matching Characteristic
CMRR Match vs. Frequency
