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OP221AZADN/a5avaiDual Low Power Operational Amplifier, Single or Dual Supply
OP221EZN/a15avaiDual Low Power Operational Amplifier, Single or Dual Supply
OP221EZADN/a47avaiDual Low Power Operational Amplifier, Single or Dual Supply
OP221GPADN/a69avaiDual Low Power Operational Amplifier, Single or Dual Supply


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P3100EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P3100EBL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
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OP221AZ-OP221EZ-OP221GP
Dual Low Power Operational Amplifier, Single or Dual Supply
REV. A
Dual Low Power Operational Amplifier,
Single or Dual Supply
FEATURES
Excellent TCVos Match, 2 �V/�C Max
Low Input Offset Voltage, 150 �V Max
Low Supply Current, 550 �A Max
Single Supply Operation, 5 V to 30 V
Low Input Offset Voltage Drift, 0.75 �V/�C
High Open-Loop Gain, 1500 V/mV Min
High PSRR, 3 �V/V
Wide Common-Mode Voltage
Range, V– to within 1.5 V of V+
Pin Compatible with 1458, LM158, LM2904
Available in Die Form
GENERAL DESCRIPTION

The OP221 is a monolithic dual operational amplifier that can
be used either in single or dual supply operation. The wide
supply voltage range, wide input voltage range, and low supply
current drain of the OP221 make it well-suited for operation
from batteries or unregulated power supplies.
The excellent specifications of the individual amplifiers combined
with the tight matching and temperature tracking between channels
SIMPLIFIED SCHEMATIC
8-Lead SO
(S-Suffix)
8-Lead
HERMETIC DIP
(Z-Suffix)
PIN CONNECTIONS

provide high performance in instrumentation amplifier designs.
The individual amplifiers feature very low input offset voltage,
low offset voltage drift, low noise voltage, and low bias current.
They are fully compensated and protected.
Matching between channels is provided on all critical parameters
including input offset voltage, tracking of offset voltage vs. tem-
perature, non-inverting bias currents, and common-mode rejection.
OP221–SPECIFICATIONS
OP221A/EOP221G

NOTESSample tested.Guaranteed by CMRR test limits.
(Electrical Characteristics at Vs = �2.5 V to �15 V, TA = 25�C, unless otherwise noted.)
OP221
SPECIFICATIONS
(Electrical Characteristics at VS = �2.5 V to �15 V, –55�C ≤ TA +125�C for OP221A,
–25�C ≤ TA ≤ +85�C for OP221E, –40�C ≤ TA ≤ +85�C for OP221G, unless otherwise noted.)
OP221A/EOP221G

NOTESSample tested.Guaranteed by CMRR test limits.
OP221A/EOP221G
Matching Characteristics at Vs = �15 V, TA = 25�C, unless otherwise noted.
OP221–SPECIFICATIONS
NOTES∆CMRR is 20 log10 VCM/∆CME, where VCM is the voltage applied to both noninverting inputs and ∆CME is the difference in common-mode input-referred error.∆PSRR is: Input-Referred Differential Error
∆VS
(Matching Characteristics at Vs = �15 V, –55�C ≤ TA ≤ +125�C for OP221A,
–25�C ≤ TA ≤ +85�C for OP221E, –40�C ≤ TA ≤ +85�C for OP221G, unless otherwise noted.
Grades E and G are sample tested.)

NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
Wafer Test Limits at Vs = �2.5 V to �15 V, TA = 25�C, unless otherwise noted.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
ABSOLUTE MAXIMUM RATINGS (Note 1)

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V
Differential Input Voltage . . . . . . . . . .30 V or Supply Voltage
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . . .Indefinite
Storage Temperature Range . . . . . . . . . . . .–65°C to +150°C
Operating Temperature Range
OP221A . . . . . . . . . . . . . . . . . . . . . . . . . . . .–55°C to +125°C
OP221E . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–25°C to +85°C
OP221G . . . . . . . . . . . . . . . . . . . . . . . . . . . .–40°C to +85°C
Lead Temperature (Soldering 60 sec) . . . . . . . . . . . . . .300°C
Junction Temperature (TJ) . . . . . . . . . . . . .–65°C to +150°C
Figure 1. Dice Characteristics
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2�JA is specified for worst case mounting conditions, i.e., �JA is specified for device
in socket for TO, Cerdip, and PDIP packages; elA is specified for device soldered
to printed circuit board for SO package.
ORDERING INFORMATION1,2
Burn-in is available on commercial and industrial temperature range parts in CerDIP, plastic DIP, and
TO-can packages.For devices processed in total compliance to MIL-STD-883, add/883 after part number. Consult factory
for 883 data sheet.Not for new design, obsolete April 2002.
Typical Perfomance Characteristics – OP221
TPC 1.Open-Loop Gain at ±15 V vs.
Temperature
TPC 4.Open-Loop Gain at ±15 V vs.
Frequency
TEMPERATURE – �C
PHASE MARGIN
Degrees
850k
800k
750k
700k
650k
GAIN B
AND
WIDTH
Hz
SLEW RA
TE

sec

TPC 7.Phase Margin, Gain Bandwidth,
and Slew Rate vs. Temperature
TPC 2.Open-Loop Gain at ± 5 V vs.
Temperature
TPC 5.Closed-Loop Gain vs.
Frequency
TPC 8.PSRR vs. Frequency
TPC 3.Open-Loop Gain at vs.
Supply Voltage
TPC 6.Gain and Phase Shift vs.
Frequency
CMRR
Hz
FREQUENCY – Hz
1001001k10k100k

TPC 9.CMRR vs. Frequency
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