IC Phoenix
 
Home ›  OO2 > OP200,Dual Low Offset, Low Power Operational Amplifier
OP200 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
OP200ADN/a33avaiDual Low Offset, Low Power Operational Amplifier


OP200 ,Dual Low Offset, Low Power Operational AmplifierCHARACTERISTICS(V = ±15 V, T = 25C, unless otherwise noted.)S A OP200A/E OP200F ..
OP200ARC ,DUAL LOW OFFSET, LOW POWER OPERATIONAL AMPLIFIERapplications requiring multiple precision op amps and where low power consumption is critical. ..
OP200AZ ,Dual Low Offset, Low Power Operational AmplifierGENERAL DESCRIPTIONNC 8 9 NCThe OP200 is the first monolithic dual operational amplifier toNC = NO ..
OP200EZ ,Dual Low Offset, Low Power Operational Amplifierfeatures an extremely low input offset voltage of less(P-Suffix),than 75 mV with a drift below 0.5 ..
OP200FZ ,Dual Low Offset, Low Power Operational AmplifierFEATURESLow Input Offset Voltage: 75 V Max16-Pin SOIC< OP200GP ,Dual Low Offset, Low Power Operational AmplifierSPECIFICATIONSELECTRICAL
P2N2222A ,Amplifier TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
P2N2907AZL1 ,Transistor Silicon Plastic PNPELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
P2RF-08 , Slim and Space-saving Power Plug-in Relay
P3000AA61 , solid state crowbar devices
P3002CAL , gas plasma arresters-package dimensions/specifications
P3002CBL , gas plasma arresters-package dimensions/specifications


OP200
Dual Low Offset, Low Power Operational Amplifier
REV. A
Dual Low Offset, Low Power
Operational Amplifier
GENERAL DESCRIPTION

The OP200 is the first monolithic dual operational amplifier to
offer OP77 type precision performance. Available in the industry
standard 8-pin pinout, the OP200 combines precision performance
with the space and cost savings offered by a dual amplifier.
The OP200 features an extremely low input offset voltage of less
than 75 mV with a drift below 0.5 mV/∞C, guaranteed over the full
military temperature range. Open-loop gain of the OP200 exceeds
5,000,000 into a 10 kW load; input bias current is under 2 nA;
CMR is over 120 dB and PSRR below 1.8 mV/V. On-chip zener-
zap trimming is used to achieve the extremely low input offset
voltage of the OP200 and eliminates the need for offset pulling.
Power consumption of the OP200 is very low, with each amplifier
drawing less than 725 mA of supply current. The total current
drawn by the dual OP200 is less than one-half that of a single
OP07, yet the OP200 offers significant improvements over this
industry standard op amp. The voltage noise density of the OP200,
11 nV/÷Hz at 1 kHz, is half that of most competitive devices.
The OP200 is pin compatible with the OP221, LM158,
MC1458/1558, and LT1013.
PIN CONNECTIONS
16-Pin SOIC
(S-Suffix)
EPOXY MINI-DIP
(P-Suffix),
8-Pin Hermetic DIP
(Z-Suffix)
FEATURES
Low Input Offset Voltage: 75 �V Max
Low Offset Voltage Drift, Over –55�C < TA < +125�C:
0.5 �V/�C Max
Low Supply Current (Per Amplifier): 725 mA Max
High Open-Loop Gain: 5000 V/mV Min
Low Input Bias Current: 2 nA Max
Low Noise Voltage Density: 11 nV/÷Hz at 1 kHz
Stable with Large Capacitive Loads: 10 nF Typ
Pin Compatible to OP221, MC1458, and LT1013 with
Improved Performance
Available in Die Form

Figure 1.Simplified Schematic (One of two amplifiers is shown.)
The OP200 is an ideal choice for applications requiring multiple
precision op amps and where low power consumption is critical.
For a quad precision op amp, see the OP400.
OP200–SPECIFICATIONS
(VS = ±15 V, TA = 25�C, unless otherwise noted.)ELECTRICAL CHARACTERISTICS

NOTESSample testedGuaranteed but not 100% testedGuaranteed by CMR test
OP200
ELECTRICAL CHARACTERISTICS(VS = 15 V, –55�C £ TA £ +125�C for OP200A, unless otherwise noted.)

NOTE
*Guaranteed by CMR test.
ELECTRICAL CHARACTERISTICS

NOTESSample testedGuaranteed but not 100% testedGuaranteed by CMR test
(VS = �15 V, TA = 25�C, unless otherwise noted.)
OP200–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS

NOTE
*Guaranteed by CMR test.
(VS = ±15 V, –40�C £ TA £ +85�C, unless otherwise noted.)
ORDERING GUIDE
TA = 25�COperating

*Not for new design, obsolete April 2002.
For military processed devices, please refer to the Standard
Microcircuit Drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp
ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±30 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous
Storage Temperature Range
P, S, Z-Package . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300∞C
Junction Temperature (TJ) . . . . . . . . . . . . . –65∞C to +150∞C
Operating Temperature Range
OP200A . . . . . . . . . . . . . . . . . . . . . . . . . . . –55∞C to +125∞C
OP200E, OP200F . . . . . . . . . . . . . . . . . . . . –40∞C to +85∞C
OP200G . . . . . . . . . . . . . . . . . . . . . . . . . . . –40∞C to +85∞C
NOTESAbsolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.�JA is specified for worst case mounting conditions, i.e., �JA is specified for
device in socket for CERDIP and P-DIP packages; �JA is specified for device
soldered to printed circuit board for SOL package.
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP200 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
Figure 2.Channel Separation Test Circuit
Figure 3.Noise Test Schematic
OP200
TPC 2. Input Offset Voltage
vs. Temperature
TPC 5. Input Bias Current vs.
Common-Mode Voltage
TPC 8. Current Noise Density
vs. Frequency
–Typical Performance Characteristics

TPC 1. Warm-Up Drift
TPC 4. Input Offset Current vs.
Temperature

TPC 7. Voltage Noise Density
vs. Frequency
TPC 3. Input Bias Current vs.
Temperature
TPC 6. Common-Mode Rejection
vs. Frequency
TPC 9. 0.1 to 10Hz Noise
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED