OP02C ,GeneralGENERAL DESCRIPTION
This high-performance general-purpose operational ampli-
fier providessigni ..
OP02CJ ,GeneralCHARACTERISTICS at Vs = '-15V, TA = 25°C, unless otherwise noted.
PACKAGE TYPE Its (Note 2) 1C U ..
OP02CJ ,GeneralANALOG
DEVICES
OP02CP ,GeneralSpecifications
Low Noise ............................. 0.65pr-p Typ
Low Drift (TCVos) ......... ..
OP02CZ ,GeneralGENERAL DESCRIPTION
This high-performance general-purpose operational ampli-
fier providessigni ..
OP02Z ,GeneralFEATURES
Excellent DC
P2353AAL , SIDACtor Balanced Series - Modified TO-220
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P2356UCL , SIDACtor® Balanced Multiport Series - MS-013
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P2500SAL , gas plasma arresters-package dimensions/specifications
P2500SAL , gas plasma arresters-package dimensions/specifications
OP02-OP02A-OP02C-OP02CJ-OP02CP-OP02CZ-OP02Z
General
ANALOG
DEVICES
General-Purpose
Operational Amplifier
FEATURES
Excellent DC Spettlmtatlor"
Low Nolse ............................. 0.65pr.p Typ
Low Drift (TCVos) ........................ NNI'' C Max
Slllcon-Nitrlde Passivatlon
125° c Tested Dice Available
"Prttmlum'' T41 Replacement
Available in Die Form
ORDERING INFORMATiONt
Tn = +22% PACKAGE OPERATING
Vos MAX CERDIP PLASTIC TEMPERATURE
(mV) 10-99 8-PIN 8-PIN RANGE
0.5 OP02AJ* OP02AZ* - MIL
2.0 OP020/883 opozz - MIL
2.0 opoch opozcz OP02CP COM
5.0 - - OP02DP COM
. For devices processed in total compliance to MIL-STD-883. add /883 after part
number. Consult factory for 883 data sheet.
t Bum-in is available on commercial and industrial temperature range parts in
CerDlP, plastic DIP, and TO-can package;
GENERAL DESCRIPTION
This high-performance general-purpose operational ampli-
fierprovidessignificantimprovementsoverindustry-standard
and "premium" 741 types while maintaining pin-tor-pin
SIMPLIFIED SCHEMATIC
compatibility, ease of application, and low cost. Key speciti-
cations, such as Vos, los, l3, CMRR, PSRR, and Avo are
guaranteed over the full operating temperature range.
Precision Monolithics' exclusive Silicon-Nitride "Triple
Passivation" process reduces "popcorn noise." A thermally-
symmetrical input-stage design provides low input offset
voltage drift and insensitivity to output load conditions.
The OP-02 is a direct replacement forthe 741. It is ideal for
upgrading existing designs where accuracy improvements
are required and for eliminating special low-drift or low-noise
selected types.
PIN CONNECTIONS
8 N.C.
BALI 7 v.
.AN 2 ' our (d-Suffix)
.m a s am.
a v- (CASE)
"HIE! N.C. BAL ”HI: N.c.
E II V+ -IN E! n V.
uh} I: OUT m4 uh» u out
V- [II]; BAL v- n E BAL
8-PIN HERMETIC DIP EPOXY MlNl-DIP
(Z-Suffix) (P-Suffix)
"OT, 02, 03 AND 0‘ FORM A
THERMALLY CROSS COUPLED
QUAD. 05, 05', 06 AND 06'
COMPRISE A SIMILAR THER,
MACLYCR0SSC0UPLEDt1UAD.
-tN 0;
0 BALANCE
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage ................................................................. :22V
Differential Input Voltage ..
Input Voltage .................................................... Supply Voltage
Output Short-Circuit Duration ................................... Indefinite
Operating Temperature Range
OP-02A, 0P-02 .......................................... -550C to +125°C
OP-02C, OP-02D ............................................. 0°C to +70°C
Storage Temperature Range ..
Lead Temperature (Soldering, 60 sec)
Junction Temperature (T i) ............................ -65''C to +150°C
. -65'C to +150°C
.......................... 300°C
PACKAGE TYPE ' (Note 2) 91c UNITS
TO-99 (J) 170 24 mm
8-Pin Hermetic DIP (Z) 162 26 "C/W
B-Pin Plastic DIP (P) 110 50 “CM
NOTES:
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
61A is specified for worst case mounting conditions, i.e.. 81A is specified for
device in socket for TO, CerDIP and P.DIP packages.
ELECTRICAL CHARACTERISTICS at Vs = -+15V, TA = 25° C, unless otherwise noted.
OP-02A OP-02C OP-02D
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage Vos RS s 20kn - 0.3 0.5 - 1 2 - 3 5 mV
Input Offset Current los - 0.5 2 - 1 5 - 5 25 nA
Input Bias Current IB - 18 30 - 20 50 - 30 100 nA
Input Resistance-
- _ - . - 1 -
Differential-Mode Rm (Note 2) 34 57 2.0 5.2 3.5 Mn
Input Voltage Range NR :10 :13 - :10 :13 - :10 :13 - V
Common-Mode VCM = t10V
85 100 - 80 95 - 70 85 - B
Rejection Ratio CMRR Rs s 20m d
Power Supply Vs = :5 to _+20V
P - 10 60 - 30 100 - 100 150 V/V
Rejection Ratio SRR Rss 20m "
Output Voltage Swing V0 RLZ 2m :12 _+13 - :12 _+13 - :12 +_13 - V
Large-Signal RLE 2kft
100 - 50 200 - 25 150 - V/ V
Voltage Gain Avo Vo = :10v 250 m
Power Consumption Pd V0 = 0V - 40 70 - 50 90 - 50 90 mW
Input Noise Voltage enp‘E 0.1 Hz to 10Hz - 0.65 - - 0.65 - - 0.65 - uvw,
In t Noise to = 10H: - 25 - - 25 - - 25 -
(ll',' e Densit en to = 100Hz - 22 - - 22 - - 22 - nVA/Hz
q y to = 100on - 21 - - 21 - - 21 -
Input Noise Current inp-p 0.1Hz to 10Hz - 12.8 - - 12.8 - - 12.8 - pAp_p
I tN . fo=10Hz - 1.4 - - 1.4 - - 1.4 -
'C' "6:25;“ it in to-- 100Hz - 0.7 - - 0.7 - - 0.7 - PA/s/AE
" s y fo= 10001-12 - 0.4 - - 0.4 - - 0.4 -
Slew Rate SR (Note 1) 0.25 0.5 - 0.25 0.5 - 0.25 0.5 - V/us
Large-Slgnal Vo = 20Vp-p 4 8 - 4 8 - 4 8 - kHz
Bandwidth (Notes1,4)
Closed-Loop AVCL= +1
BW 1 1.3 - 1 1 3 - 1 1 -
Bandwidth (Note 3) 3 MHZ
Risetime t AVCL = +1 - 200 350 - 200 350 - 200 350 n
r Vo=50mViNote1; s
Overshoot os (Note 1, - 5 10 - 5 10 - 5 10 %
NOTES:
l. Sample tested,
2, Guaranteed by input bias current.
3, Guaranteed by maximum riselime.
4. Guaranteed by minimum slew rate.
ELECTRICAL CHARACTERISTICS at VS = t15V, -55°C s TA +125"C, unless otherwise noted.
0P-02A 0P-02
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage VOS RS s 20ki2 - 0.5 1 - 1.4 3 mV
Average Input Offset tt
Voltage Drift (Note 1) chos Rs - 500 - 2 5 - 4 1O w1// C
Input Offset Current los - 1 5 - 2 10 nA
Average Input Offset
- . - 1 1 Ck
Current Drift (Note 1) TCIOS 7 5 75 5 50 pA/ C
Input Bias Current IB - 30 60 - 40 100 nA
Input Voltage Range NR :10 :13 - :10 :13 - V
Common-Mode V = s10V
CM - - dB
Rejection Ratio CMRR Rs s 20m 80 95 80 95
Power Supply V = 15V 10 :20V
PSRR s - 1 - 30 100 V
Rejection Ratio Rs s 20m o 60 w N
Large-Signal R a am
A L - 6 - V V
Voltage Gain vo V0 = :10V 50 100 25 0 /m
Output Voltage Swing Vo Ru 2 2m :12 :13 - :12 s13 - V
ELECTRICAL CHARACTERISTICS at Vs = i15V. ty' C s TA s +70°C, unless otherwise noted.
OP-OZC OP-020
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage Vos Rss 20kn - 1.2 3 - 3 6 mV
Average Input Offset
T = - 4 IO - 8 20 W'
Voltage Drift (Note 1) cvos Rs son # C
Input Offset Current los - 1.4 10 - 5 50 nA
Average Input Offset
- 15 250 - 7O A/°
Current Drift (Note 1) TCIOS 500 p C
Input Bias Current Its - 25 100 - 50 200 nA
Input Voltage Range IVR t10 -+13 - _+10 A13 - V
Common-Mode VCM = -+10V
MRR 80 90 - 70 85 - dB
Rejection Ratio C as s 20kn
Power Supply Vs = i510 :ZOV
P RR - 30 100 - 100 150 V/V
Rejection Ratio S as s 20m "
Large-Signal RL 2 2ktt
A 25 60 - 15 25 - V/ V
Voltage Gain V0 Vo -- i10V m
Output Voltage Swing V0 RL 2 2m i 12 i 13 - t10 1'13 - V
1. Sample tested.
DICE CHARACTERISTICS (125°C TESTED DICE AVAILABLE)
1. NULL
INVERTING INPUT
NONINVERTING INPUT
OUTPUT
.".°’9‘P.‘°N
DIE SIZE 0.047 X 0.043 inch, 2021 sq. mils
(1.19 M 1.09 mm, 1.30 sq. mm)
WAFER TEST LIMITS at Vs = :15V, TA = 25°C for OP-02N, OP-02G and OP-02GR devices; TA = 125°C for OP-02NT and
OP-02GT devices, unless otherwise noted.
OP-02NT 0P-02N OP-02GT OP-02G OP-OZGR
PARAMETER SYMBOL CONDITIONS LIMIT LIMIT LIMIT LIMIT LIMIT UNITS
Input Offset Voltage Vos Rs s 20m 1 0.5 3 2 5 mV MAX
Input Offset Current los 5 3 6 5 25 nA MAX
Input Bias Current Irs 50 30 60 50 200 nA MAX
Input Voltage Range IVR :13 t13 :13 :13 t13 V MIN
Common-Mode VCM = :10V
Rejection Ratio CMRR Rs s 20m 80 85 80 80 70 dB MIN
Power Supply Vs = t5V to :20V
Rejection Ratio PSRR RSS 20kn 60 60 100 100 150 PN/V MAX
Output Voltage Swing vo RL 2 2kn :12 t12 :12 :12 :12 V MIN
Large-Signal 8L2 2kil
Voltage Gain Avo V0 = t10V 50 100 25 50 25 V/mV MlN
Power Consumption Pd Vo = 0V - 90 - 90 90 mW MAX
For 25°C characteristics of NT and GT devices, see N and G characteristics, respectively.
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging IS not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample Io! assembly and testing.
TYPICAL ELECTRICAL CHARACTERISTICS at Vs = :15V, TA = 25°C, unless otherwise noted.
0P-O2NT OP-02GT
OP-02N OP-02G op-ozen
PARAMETER SYMBOL CONDITIONS TYPICAL TYPICAL TYPICAL UNITS
Input Resistance
Differential-Mode Rm 5.7 5.2 3.5 Mit
Input Noise Voltage enp-p 0.1Hz to 10Hz 0.65 0.65 0.65 SA/p-p
_ to = 10Hz 25 25 25
""),'l ”“58 q en f0 = 100Hz 22 22 22 nu/v/i-iz
o tage ensity to = 1000112 21 21 21
Input Noise Current lnp-p 0.1 Hz to 10Hz 12.8 12.8 12.8 pAp-p
I N _ f0 =10Hz 1.4 1.4 1.4 .
"tf l'"l, it in fo = 100Hz 0.7 0.7 0.7 PA/v%z
urren enm y to =1000Hz 0.4 0.4 0.4
Slew Rate SR 0.5 0.5 0.5 V/ps
Large-Signal -
Bandwidth V0 - 20Vp-p 8 8 8 kHz
Closed-Loop -
Bandwidth BW Avcc= +1 1.3 1.3 1.3 MHz
. AV = +1
Risetlme t, VIN = 50mV 200 200 200 ns
Overshoot OS 15 15 15 %
Average Input Offset Rs = 500ft 0
Voltage Drift TCVos \Note l; 2 4 8 “W c
A e a e l tOtt t
V r g npu se TCIOS 7.5 15 30 pA/°C
Current Drift
NOTE: .
1, Sample tested,
BURN-IN CIRCUIT
OFFSET NULLING CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
INPUT SPOT NOISE
VOLTAGE vs FREQUENCY
INPUT SPOT NOISE
CURRENT " FREQUENCY
Vs--ttSV
- TA -25°c
_ Vs = 215V
Rs-- 509
Ta--2tpc
TYPICAL
TYPICAL
VOLTAGE NOISE DENSITY (nV/Jm)
CURRENT NOISE (pAl
0.01 0.10 1.0 10 100 1000 0.01 0.10 1.0 to 100 1000
FREQUENCY (H1) FREQUEMY (H1)
DIFFERENTIAL
OUTPUT VOLTAGE vs INPUT RESISTANCE
LOAD RESISTANCE " TEMPERATURE
TA ' 25°C POSITIVE swmc
vs = nsv
NEGATIVE SWING
OUTPUT SWING (VOLTS)
INPUT RESISTANCE (um
tht 1.0 10 -60 -20 +20 +60 +100 +110
LOAD RESISTANCE TO GROUND (kn) TEMPERATURE ('C)
POWER CONSUMPTION (mW)
INPUT WIDEBAND NOISE "
BANDWIDTH (0.1 Hz TO
FREQUENCY INDICATED)
Vs = t15V
TA = +276
nus NOISE (w)
0.1 1.0 " 100
BANDWIDTH (kHz)
POWER CONSUMPTION
" POWER SUPPLY
- TA= 2S'C
0 20 " 60
TOTAL SUPPLY VOLTAGE, V+ TO V- (VOLTS)
