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NZT44H8FAIRCHILN/a32000avaiNPN Power Amplifier


NZT44H8 ,NPN Power AmplifierD44H8 / NZT44H8Discrete POWER & SignalTechnologiesD44H8 NZT44H8CEBC CEBTO-220SOT-223NPN Power Ampli ..
NZT560 ,NPN Low Saturation TransistorNZT560/NZT560ANZT560/NZT560ANPN Low Saturation Transistor4• These devices are designed with high cu ..
NZT560A ,NPN Low Saturation Transistorapplications involving pulsed or low duty cycle operations.
NZT560A ,NPN Low Saturation TransistorNZT560/NZT560ANZT560/NZT560ANPN Low Saturation Transistor4• These devices are designed with high cu ..
NZT560A ,NPN Low Saturation TransistorNZT560/NZT560ANZT560/NZT560ANPN Low Saturation Transistor4• These devices are designed with high cu ..
NZT605 ,NPN Darlington TransistorNZT605NZT605NPN Darlington Transistor4 This device designed for
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device


NZT44H8
NPN Power Amplifier
D44H8 / NZT44H8 Discrete POWER & Signal Technologies D44H8 NZT44H8 C E B C C E B TO-220 SOT-223 NPN Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4Q. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO I Collector Current - Continuous 8.0 A C Operating and Storage Junction Temperature Range -55 to +150 °C TJ, T stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units D44H8 *NZT44H8 P Total Device Dissipation 60 1.5 W D Derate above 25°C 480 12 mW/°C Rθ Thermal Resistance, Junction to Case 2.1 °C/W JC Rθ Thermal Resistance, Junction to Ambient 62.5 83.3 °C/W JA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm .  1997
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