| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NXT2004 |
ATI |
N/a |
60 |
 |
|
NY5W-K , Ultra slim type with 5 mm thickness, Low power consumption and high sensitivity
NYC0102BLT1G , Sensitive Gate Silicon Controlled Rectifiers
NZD560A ,NPN Low Saturation TransistorNZD560ANZD560ANPN Low Saturation Transistor• These devices are designed for high current gain and l ..
NZF220DFT1 ,EMI Filter with ESD ProtectionELECTRICAL CHARACTERISTICSSymbol Characteristic Min Typ Max UnitV Zener Breakdown Voltage, @ I = 1 ..
NZF220DFT1G ,EMI Filter with ESD ProtectionMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
P0102DN ,0.8A SCRSapplicationsTO-92 SOT-223where available gate current is limited, such as(P01xxA) (P01xxN)ground fa ..
P0102DN 5AA4 ,0.8A SCRSFEATURES:ASymbol Value UnitGI0.8 AT(RMS)KV /V400 and 600 VDRM RRMI5 to 200 μAGTDESCRIPTIONThanks to ..
P0102DN5AA4 ,0.8A SCRsapplicationsTO-92 SOT-223where available gate current is limited, such as(P01xxA) (P01xxN)ground fa ..
