| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NXA1031/0 |
|
N/a |
25 |
 |
|
NY5W-K , Ultra slim type with 5 mm thickness, Low power consumption and high sensitivity
NYC0102BLT1G , Sensitive Gate Silicon Controlled Rectifiers
NZD560A ,NPN Low Saturation TransistorNZD560ANZD560ANPN Low Saturation Transistor• These devices are designed for high current gain and l ..
NZF220DFT1 ,EMI Filter with ESD ProtectionELECTRICAL CHARACTERISTICSSymbol Characteristic Min Typ Max UnitV Zener Breakdown Voltage, @ I = 1 ..
NZF220DFT1G ,EMI Filter with ESD ProtectionMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
P0102AL 5AA4 ,Sensitive gate SCRsElectrical characteristics P010xxA and P010xxNSymbol Test conditions Value UnitI Max. 200 µAGTV = 1 ..
P0102AL5AA4 ,Sensitive gate SCRsapplications GAwhere available gate current is limited, such as Kground fault circuit interrupters, ..
P0102AL5AA4 ,Sensitive gate SCRsFeatures• On-state rms current, 0.8 A• Repetitive peak off-state voltage up to 600 V• Triggering ga ..
