NX7361JB-BC ,1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (150 mW min). With FC-UPC connector.FEATURES DESCRIPTIONNEC's NX7361JB-BC is a 1310 nm developed strained Mul-• HIGH OUTPUT POWER:tiple ..
NX8511UD ,1550 nm InGaAsP MQW-DFB TOSA for long haul 2.5 Gb/s applications.FEATURES• PEAK EMISSION WAVELENGTH: λp = 1 550 nm• OPTICAL OUTPUT POWER: Pf = 2.0 mW• WIDE OPERATIN ..
NXA025A0X-P , NaOSTM NXA025 SIP Non-isolated Power Modules
NY5W-K , Ultra slim type with 5 mm thickness, Low power consumption and high sensitivity
NYC0102BLT1G , Sensitive Gate Silicon Controlled Rectifiers
NZD560A ,NPN Low Saturation TransistorNZD560ANZD560ANPN Low Saturation Transistor• These devices are designed for high current gain and l ..
P0080SCL , gas plasma arresters-package dimensions/specifications
P0080SCL , gas plasma arresters-package dimensions/specifications
P0080SC-L , gas plasma arresters-package dimensions/specifications
P0080SCLRP , The series provides a surface mount solution that enables equipment to comply
P0080SCLRP , The series provides a surface mount solution that enables equipment to comply
P0080SCMCL , gas plasma arresters-package dimensions/specifications
NX7361JB-BC
