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Partno	Mfg	Dc	Qty	Available	Descript
NX3008PBKS	NXP/PH	N/a	10000	avai	30 V, 200 mA dual P-channel Trench MOSFET

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NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
Product profile1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
Rev. 1 — 1 August 2011 Product data sheet
Table 1. Quick reference data
Per transistor
VDS drain-source voltage Tj =25°C - - -30 V
VGS gate-source voltage -8 - 8 V drain current VGS =-4.5V;
Tamb =25°C
[1]- - -200 mA
Static characteristics (per transistor)
RDSon drain-source on-state
resistance
VGS =-4.5V; = -200 mA; Tj =25°C
-2.8 4.1 Ω
NXP Semiconductors NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET Pinning information Ordering information Marking
[1] % = placeholder for manufacturing site code.
Table 2. Pinning information
Table 3. Ordering information
NX3008PBKS SC-88 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codes
NX3008PBKS LC%
NXP Semiconductors NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VDS drain-source voltage Tj =25°C - -30 V
VGS gate-source voltage -8 8 V drain current VGS =-4.5 V; Tamb =25°C [1]- -200 mA
VGS =-4.5 V; Tamb =100°C [1]- -125 mA
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -0.8 A
Ptot total power dissipation Tamb =25°C [2]- 280 mW
[1]- 320 mW
Tsp=25°C - 990 mW
Per device
Ptot total power dissipation Tamb =25°C [2]- 445 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1]- -200 mA
ESD maximum rating
VESD electrostatic discharge voltage HBM [3]- 2000 V
NXP Semiconductors NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
NXP Semiconductors NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Table 6. Thermal characteristics
Per device
Rth(j-a) thermal resistance from junction to
ambient
in free air [1]- - 300 K/W
Per transistor
Rth(j-a) thermal resistance from junction to
ambient
in free air [1]- 390 445 K/W
[2]- 340 390 K/W
Rth(j-sp) thermal resistance from junction to
solder point - 130 K/W

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