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NVD5803N
Data Sheet
NVD5803N
Power MOSFET
40 V, 85 A, Single NïChannel, DPAK
Features Low RDS(on) High Current Capability Avalanche Energy Specified AECïQ101 Qualified These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications DC Motor Drive Reverse Battery Protection Glow Plug
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DrainïtoïSource Voltage VDSS 40 V
GateïtoïSource Voltage ï Continuous VGS 20 V
Continuous Drain
Current (RJC)
(Note 1) Steady
State
TC = 25°C ID 85 A
TC = 100°C 61
Power Dissipation
(RJC) (Note 1)
TC = 25°C PD 83 W
Pulsed Drain Current tp= 10 s IDM 228 A
Operating Junction and Storage Temperature TJ, Tstg ï55 to
Source Current (Body Diode) IS 85 A
Single Pulse DrainïtoïSource Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 ,
IL(pk) = 40 A, L = 0.3 mH)
EAS 240 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s) 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctionïtoïCase (Drain) RJC 1.8 °C/W
JunctionïtoïAmbient ï Steady State (Note 1) RJA 42 Surfaceïmounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
40 V 5.7 m @ 10 V
RDS(on) MAX ID MAXV(BR)DSS
http://2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATIONGate
Drain3Source
Drain = Year = Work Week
5803N = Device Code = PbïFree Package
NïCHANNEL MOSFET
85 A
