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Partno Mfg Dc Qty AvailableDescript
NTTS2P02MOTN/a302avaiPower MOSFET -2.4 Amps, -20 Volts
NTTS2P02R2ON SemiconductorN/a24000avaiPower MOSFET -2.4 Amps, -20 Volts
NTTS2P02R2ONN/a3855avaiPower MOSFET -2.4 Amps, -20 Volts


NTTS2P02R2 ,Power MOSFET -2.4 Amps, -20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) *CCharacteristic Symbol Min Typ Max Un ..
NTTS2P02R2 ,Power MOSFET -2.4 Amps, -20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain–to–Source Voltage V ..
NTTS2P03 ,Power MOSFET -2.48 Amps, -30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 6.)CCharacteristic Symbol Min Ty ..
NTTS2P03R2 ,Power MOSFET -2.48 Amps, -30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
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NTTS2P02-NTTS2P02R2
Power MOSFET -2.4 Amps, -20 Volts
NTTS2P02R2
Power MOSFET -2.4 Amps, -20 Volts
Single P–Channel Micro8�
Features
• Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive• Miniature Micro–8 Surface Mount Package• Diode Exhibits High Speed, Soft Recovery• Micro8 Mounting Information Provided
Applications
• Power Management in Portable and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Minimum FR–4 or G–10 PCB, Steady State. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State. Pulse Test: Pulse Width ≤ 300 �s, Duty Cycle ≤ 2%.
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