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NTQD6866R2PHIN/a36000avaiPower MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8


NTQD6866R2 ,Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8MAXIMUM RATINGS (T = 25°C unless otherwise noted)G1 G2CRating Symbol Value UnitS1 S2Drain–to–Source ..
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NTQD6866R2
Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8
MAXIMUM RATINGS (T = 25°C unless otherwise noted)G1 G2CRating Symbol Value UnitS1 S2Drain–to–Source Voltage V 20 VdcDSSDrain–to–Gate Voltage (R = 1.0 MΩ) V 20 VdcGS DGRGate–to–Source Voltage – Continuous V 12 VdcGSThermal Resistance – Single DieTSSOP–8Junction–to–Ambient (Note 1) R 62.5 °C/WJA8CASE 948STotal Power Dissipation @ T = 25C P 2.0 WA DPLASTICContinuous Drain Current @ T = 25C I 6.9 AdcA DPulsed Drain Current (Note 4) I 24 Adc 1DMThermal Resistance – Single DieMARKING DIAGRAMJunction–to–Ambient (Note 2) R 88 °C/WJATotal Power Dissipation @ T = 25C P 1.42 W & PIN ASSIGNMENTA DContinuous Drain Current @ T = 25C I 5.8 AdcA DContinuous Drain Current @ T = 70C I 4.6 AdcA D1S1 8DPulsed Drain Current (Note 4) I 20 AdcDM866 DG1 2 7Thermal Resistance – Single DieYWWS2 3 6 DJunction–to–Ambient (Note 3) R 132 °C/WJAG2 4 5 DTotal Power Dissipation @ T = 25C P 0.94 WA DContinuous Drain Current @ T = 25C I 4.7 AdcA DTop ViewContinuous Drain Current @ T = 70C I 3.8 AdcA DPulsed Drain Current (Note 4) I 14 AdcDM866 = Device Code1. Mounted onto a 2″ square FR–4 board (1″ sq. 2 oz Cu 0.06″ thick single sided),YWW = Date Codet < 10 seconds.2. Mounted onto a 2″ square FR–4 board (1″ sq. 2 oz Cu 0.06″ thick single sided),t = 10 seconds.ORDERING INFORMATION3. Minimum FR–4 or G–10 PCB, t = steady state.4. Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2%.Device Package ShippingNTQD6866R2 TSSOP–8 4000/Tape & Reel Semiconductor Components Industries, LLC, 20011 Publication Order Number:September, 2001 – Rev. 1 NTQD6866R2/DNTQD6866R2
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