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NTMFS4841NONSN/a3000avaiPower MOSFET, 30 V, 57 A, Single N-Channel


NTMFS4841N ,Power MOSFET, 30 V, 57 A, Single N-ChannelMAXIMUM RATINGS (T = 25°C unless otherwise stated)JD (5,6)Parameter Symbol Value UnitDrainï toï Sou ..
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NTMFS4841N
Power MOSFET, 30 V, 57 A, Single N-Channel
MAXIMUM RATINGS (T = 25°C unless otherwise stated)JD (5,6)Parameter Symbol Value UnitDrainï toï Source Voltage V 30 VDSSGateï toï Source Voltage V ±20 VGSContinuous Drain I AT = 25°C 13.1A DG (4)Current RJA(Note 1) SteadyT = 85°C 9.5AStateS (1,2,3)Power Dissipation T = 25°C P 2.17 WDANï CHANNEL MOSFETR (Note 1)JAT = 85°C 1.13AContinuous Drain T = 25°C I 19.9 ADACurrent RïJAMARKINGT = 85°C 14.4t = 10 sec ADIAGRAMPower Dissipation P WT = 25°C 5A DDR t 10 secSteadyJA,T = 85°C 2.6AS DState14841NContinuous Drain I AT = 25°C 8.3A DSCurrent R AYWZZJASOï 8 FLAT LEADST = 85°C 6(Note 2) ACASE 488AAG DPower Dissipation T = 25°C P 0.87 WSTYLE 1A DDR (Note 2)JAT = 85°C 0.45AA = Assembly LocationContinuous Drain T = 25°C I 57 AC DY = YearCurrent RJCT = 85°C 41 W = Work WeekC(Note 1)ZZ = Lot TraceabilityPower Dissipation T = 25°C P 41.7 WDCR (Note 1)JCT = 85°C 21.7CPulsed Drain t =10s T = 25°C I 171 AA DMpCurrentORDERING INFORMATIONOperating Junction and Storage T ,ï 55 to °CJ†Device Package ShippingTemperature T +150STGSource Current (Body Diode) I 35 A NTMFS4841NT1G SOï 8FL 1500 / S(Pbï Free) Tape & ReelDrain to Source dV/dt dV/dt 6 V/nsSingle Pulse Drainï toï Source Avalanche EAS 180 mJ NTMFS4841NT3G SOï 8FL 5000 / Energy (V = 24 V, V = 10 V,DD GS (Pbï Free) Tape & ReelI = 19 A , L = 1.0 mH, R = 25 L pk G†For information on tape and reel specifications,Lead Temperature for Soldering Purposes T 260 °CLincluding part orientation and tape sizes, please(1/8” from case for 10 s)refer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.Stresses exceeding
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